K9LCG08U1M vs K9XXG08UXM Comparison
Detailed side-by-side comparison of K9LCG08U1M by Samsung Electronics and K9XXG08UXM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K9LCG08U1M | K9XXG08UXM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Flash | Memory ICs |
| Lifecycle Status | Active | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $11.85 | $0.00 |
| Memory Type | NAND Flash, MLC | — |
| Density | 64 Gbit (8 GB) | — |
| Organization | x8 I/O | — |
| Interface | Asynchronous multiplexed NAND I/O | — |
| Cell Type | MLC (2 bits per cell) | SLC (single-level cell) NAND |
| Package | BGA | 48-pin TSOP |
| Mounting Type | Surface Mount | Surface Mount |
| Supply Voltage | [DATA_NEEDED: supply voltage] | 2.7 V to 3.6 V |
| Page Size | [DATA_NEEDED: page size] | (2K + 64) Byte |
| Block Size | [DATA_NEEDED: block size] | (256K + 8K) Byte |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| RoHS Status | unknown | [DATA_NEEDED: RoHS Status] |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| Memory Size | — | 2G x 8 Bit (2Gb) |
| Memory Cell Array Organization | — | (1G + 32M) bit x 8 bit |
| Data Register | — | (2K + 64) bit x 8 bit |
| Program Operation | — | Automatic Page Program, (2K + 64) Byte |
| Erase Operation | — | Automatic Block Erase, (256K + 8K) Byte |
| I/O Interface | — | 8-bit multiplexed address/data/command |
| Control Signals | — | CLE, ALE, CE, RE, WE, WP, R/B |
| Access Time (tR) | — | [DATA_NEEDED: Access Time] |