K9LCG08U1M vs K9XXG08UXM 比較
詳細な並列比較: K9LCG08U1M メーカー: Samsung Electronics および K9XXG08UXM メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | K9LCG08U1M | K9XXG08UXM |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | Flash | Memory ICs |
| ライフサイクル状態 | 有効 | Obsolete |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $11.85 | $0.00 |
| メモリタイプ | NAND Flash, MLC | — |
| Density | 64 Gbit (8 GB) | — |
| メモリ構成 | x8 I/O | — |
| インターフェース | Asynchronous multiplexed NAND I/O | — |
| Cell Type | MLC (2 bits per cell) | SLC (single-level cell) NAND |
| パッケージ | BGA | 48-pin TSOP |
| 実装タイプ | Surface Mount | Surface Mount |
| 電源電圧 | [DATA_NEEDED: supply voltage] | 2.7 V to 3.6 V |
| Page Size | [DATA_NEEDED: page size] | (2K + 64) Byte |
| Block Size | [DATA_NEEDED: block size] | (256K + 8K) Byte |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| 動作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| RoHS ステータス | unknown | [DATA_NEEDED: RoHS Status] |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| メモリサイズ | — | 2G x 8 Bit (2Gb) |
| Memory Cell Array Organization | — | (1G + 32M) bit x 8 bit |
| Data Register | — | (2K + 64) bit x 8 bit |
| Program Operation | — | Automatic Page Program, (2K + 64) Byte |
| Erase Operation | — | Automatic Block Erase, (256K + 8K) Byte |
| I/O Interface | — | 8-bit multiplexed address/data/command |
| Control Signals | — | CLE, ALE, CE, RE, WE, WP, R/B |
| Access Time (tR) | — | [DATA_NEEDED: Access Time] |