K9MDG08U5M vs K9XXG08U0M Comparison
Detailed side-by-side comparison of K9MDG08U5M by Samsung Electronics and K9XXG08U0M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K9MDG08U5M | K9XXG08U0M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $35.50 | $5.60 |
| Memory Type | MLC Large Block NAND Flash | NAND Flash |
| Density | 16 Gbit (2 GB) | 8 G-bit |
| Organization | 16G x 8 bit | 1G x 8 bit |
| Cell Type | MLC (2 bits per cell) | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Interface | Asynchronous x8 multiplexed address/data | 8-bit parallel NAND (command/address/data multiplexed) |
| Package | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | 48-pin TSOP-I |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| RoHS Status | unknown | [DATA_NEEDED: RoHS status] |
| Spare Area | — | 256 M-bit (per K9K8G08U0M) |
| Supply Voltage | — | 2.7 V to 3.6 V (3.3V device) |
| Page Read Time | — | 20 us |
| Access Interface Standard | — | Samsung legacy NAND command set |
| Bad Block Management | — | Factory bad block marking (host-managed ECC required) |
| ECC Requirement | — | External ECC by host controller |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |