K9MDG08U5M vs K9XXG08U0M Сравнение
Подробное сравнение бок о бок K9MDG08U5M от Samsung Electronics и K9XXG08U0M от Samsung Electronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | K9MDG08U5M | K9XXG08U0M |
|---|---|---|
| Бренд | Samsung Electronics | Samsung Electronics |
| Категория | Memory ICs | Memory ICs |
| Статус жизненного цикла | Активен | Obsolete |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $35,50 | $5,60 |
| Тип памяти | MLC Large Block NAND Flash | NAND Flash |
| Density | 16 Gbit (2 GB) | 8 G-bit |
| Организация памяти | 16G x 8 bit | 1G x 8 bit |
| Cell Type | MLC (2 bits per cell) | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Интерфейс | Asynchronous x8 multiplexed address/data | 8-bit parallel NAND (command/address/data multiplexed) |
| Корпус | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | 48-pin TSOP-I |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Рабочая температура | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| Статус RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Spare Area | — | 256 M-bit (per K9K8G08U0M) |
| Напряжение питания | — | 2.7 V to 3.6 V (3.3V device) |
| Page Read Time | — | 20 us |
| Access Interface Standard | — | Samsung legacy NAND command set |
| Bad Block Management | — | Factory bad block marking (host-managed ECC required) |
| ECC Requirement | — | External ECC by host controller |
| Уровень MSL | — | [DATA_NEEDED: moisture sensitivity level] |