Samsung Electronics

K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

MPN: K9MDG08U5M βœ“ Active
In Stock Ships in 1-3 business days
2.7 V Vdss 48-pin TSOP1 dual stacked, 12 mm x 20 mm Package MLC Large Block NAND Flash Memory
From $35.5 USD / Unit
MOQ: 1 |
Price updated: 2026-09-03
Volume Pricing
Qty Unit Price Extended
1 $35.5 $35.50
10 $37 $370.00
100 $38.5 $3,850.00
500 $41.5 $20,750.00
1,000 $45 $45,000.00
ℹ️ All prices are in USD

Drop-in alternatives for K9MDG08U5M β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

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K9HCG08U1M

βœ… Drop-In
Samsung Electronics
πŸ“¦ 48-pin TSOP1
MLC NAND Flash Β· 64 Gbit Β· 8G x 8 Β· 8 bit Β· Asynchronous NAND (multiplexed address/data/command) Β· [DATA_NEEDED: supply voltage] Β· [DATA_NEEDED: page size] Β· [DATA_NEEDED: block size]

βœ“ In Stock

Contact for price

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K9LBG08U0M

βœ… Drop-In
πŸ“¦ 48-pin TSOP1
same preliminary datasheet family (K9XXG08UXM), different density variant, pin-to-pin compatible

πŸ“‹ Reference alternative (not in catalog)

K9LCG08U1M

βœ… Drop-In ⚠️ 参数待ιͺŒθ―
Samsung Electronics
πŸ“¦ 48-pin TSOP1
NAND Flash, MLC Β· 64 Gbit (8 GB) Β· x8 I/O Β· Asynchronous multiplexed NAND I/O Β· MLC (2 bits per cell) Β· BGA Β· Surface Mount Β· [DATA_NEEDED: supply voltage]

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$11.85 / Unit

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K9XXG08U0M

βœ… Drop-In ⚠️ 参数待ιͺŒθ―
Samsung Electronics
πŸ“¦ 48-pin TSOP1
NAND Flash Β· 8 G-bit Β· 1G x 8 bit Β· 256 M-bit (per K9K8G08U0M) Β· 2.7 V to 3.6 V (3.3V device) Β· 8-bit parallel NAND (command/address/data multiplexed) Β· 20 us Β· 48-pin TSOP-I

βœ“ In Stock

$5.6 / Unit

View Datasheet β†’

K9XXG08UXM

βœ… Drop-In ⚠️ 参数待ιͺŒθ―
Samsung Electronics
πŸ“¦ 48-pin TSOP1
2G x 8 Bit (2Gb) Β· (1G + 32M) bit x 8 bit Β· (2K + 64) bit x 8 bit Β· 2.7 V to 3.6 V Β· (2K + 64) Byte Β· (256K + 8K) Byte Β· Automatic Page Program, (2K + 64) Byte Β· Automatic Block Erase, (256K + 8K) Byte

βœ“ In Stock

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K9MDG08U5M Maximum Ratings & Electrical Characteristics

Memory Type MLC Large Block NAND Flash
Density 16 Gbit (2 GB)
Organization 16G x 8 bit
Cell Type MLC (2 bits per cell)
Supply Voltage Min 2.7 V
Supply Voltage Max 3.6 V
Interface Asynchronous x8 multiplexed address/data
Package 48-pin TSOP1 dual stacked, 12 mm x 20 mm
Terminals 48
Circuits 1
Die Configuration Dual stacked
Mounting Type Surface Mount
RoHS Status unknown

K9MDG08U5M Pin Configuration

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin 1 R/B β€” Ready/Busy output (open-drain)
Pin 2 RE β€” Read enable
Pin 3 CE β€” Chip enable
Pin 4 NC β€” Not connected (per datasheet)
Pin 5 NC β€” Not connected (per datasheet)
Pin 6 NC β€” Not connected (per datasheet)
Pin 7 NC β€” Not connected (per datasheet)
Pin 8 NC β€” Not connected (per datasheet)
Pin 9 NC β€” Not connected (per datasheet)
Pin 10 NC β€” Not connected (per datasheet)
Pin 11 CLE β€” Command latch enable
Pin 12 ALE β€” Address latch enable
Pin 13 WE β€” Write enable
Pin 14 WP β€” Write protect
Pin 15 NC β€” Not connected (per datasheet)
Pin 16 NC β€” Not connected (per datasheet)
Pin 17 NC β€” Not connected (per datasheet)
Pin 18 NC β€” Not connected (per datasheet)
Pin 19 NC β€” Not connected (per datasheet)
Pin 20 NC β€” Not connected (per datasheet)
Pin 21 NC β€” Not connected (per datasheet)
Pin 22 NC β€” Not connected (per datasheet)
Pin 23 VCC β€” Power supply (2.7 V to 3.6 V)
Pin 24 VCC β€” Power supply (2.7 V to 3.6 V)
Pin 25 NC β€” Not connected (per datasheet)
Pin 26 NC β€” Not connected (per datasheet)
Pin 27 NC β€” Not connected (per datasheet)
Pin 28 NC β€” Not connected (per datasheet)
Pin 29 I/O0 β€” Data input/output bit 0
Pin 30 I/O1 β€” Data input/output bit 1
Pin 31 I/O2 β€” Data input/output bit 2
Pin 32 I/O3 β€” Data input/output bit 3
Pin 33 VSS β€” Ground
Pin 34 I/O4 β€” Data input/output bit 4
Pin 35 I/O5 β€” Data input/output bit 5
Pin 36 I/O6 β€” Data input/output bit 6
Pin 37 I/O7 β€” Data input/output bit 7 (also used for status/ID)
Pin 38 NC β€” Not connected (per datasheet)
Pin 39 NC β€” Not connected (per datasheet)
Pin 40 NC β€” Not connected (per datasheet)
Pin 41 VSS β€” Ground
Pin 42 VSS β€” Ground
Pin 43 NC β€” Not connected (per datasheet)
Pin 44 NC β€” Not connected (per datasheet)
Pin 45 NC β€” Not connected (per datasheet)
Pin 46 NC β€” Not connected (per datasheet)
Pin 47 NC β€” Not connected (per datasheet)
Pin 48 NC β€” Not connected (per datasheet)

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for K9MDG08U5M Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

K9MDG08U5M is suitable for 6 applications: USB Flash Drives, SD and CF Memory Cards, Industrial Data Loggers, Set-Top Boxes and Embedded Storage, Firmware and Boot Storage, Consumer Electronics Backup Storage.

πŸ–₯️

USB Flash Drives

The K9MDG08U5M provides 16 Gbit of MLC storage in a compact TSOP1-48 dual-stacked package, giving USB drive makers 2 GB per chip without stacking separate dies on the PCB. Its 2.7 V to 3.6 V single supply matches USB-powered controller rails directly through a 3.3 V LDO. The x8 multiplexed bus interfaces to standard USB NAND controllers with CLE/ALE/WE/RE handshake. The dual-stacked construction halves the number of solder joints versus two single-die packages, improving reliability at equivalent capacity. MLC economics keep the bill of materials competitive for consumer drives, provided the controller implements ECC and wear-leveling appropriate for MLC endurance limits.

πŸ”§

SD and CF Memory Cards

Memory card controllers pair naturally with the K9MDG08U5M because its 16 Gbit dual-stacked MLC density matches the 2 GB card generation in a single 48-pin TSOP1 footprint (12 mm x 20 mm) that fits card PCB height limits. The 2.7 V to 3.6 V range supports both 3.3 V card operation and dual-voltage controller designs. The asynchronous x8 NAND interface with ready/busy polling via R/B allows card controllers to optimize read-ahead and background erase. Because MLC read margins tighten over life, card firmware should schedule periodic data refresh. Designers should reserve spare blocks from the 2 GB array to sustain capacity after wear-out of defective blocks.

🏭

Industrial Data Loggers

Veswin distributor data specifies the K9MDG08U5M-PCB0 over -40C to +105C (TA), enabling industrial data loggers deployed outdoors or in machinery enclosures to record sensor histories at 2 GB per chip. The 3.3 V class supply integrates with industrial 3.3 V microcontroller rails, and the WP pin provides write protection during brownout events, protecting log integrity at power failure. MLC endurance is adequate for logging applications where write frequency is moderate and wear-leveling spreads writes evenly. Extended-temperature retention should be verified against Samsung datasheet figures, and power-fail recovery logic should rely on the R/B ready/busy line to abort cleanly mid-page.

πŸ“Ί

Set-Top Boxes and Embedded Storage

Set-top box platforms use NAND like the K9MDG08U5M for firmware and PVR storage. Its 16 Gbit capacity comfortably holds bootloader, kernel, and application images with room for recording buffers, while the standard x8 asynchronous interface connects to common SoC NAND controllers without glue logic. The dual-stacked die is transparent to software beyond device-ID-based block addressing, allowing one PCB design to be populated with different densities from the same K9XXG08UXM family (for example K9LBG08U0M or K9HCG08U1M) to create product tiers. Firmware must implement BCH-class ECC because MLC read margins are tighter than SLC, plus bad-block management and boot-block mirroring for field reliability.

⚑

Firmware and Boot Storage

For embedded boards booting from NAND, the K9MDG08U5M stores bootloader images at low cost with 2 GB available for field-updatable firmware images and settings. Most SoC boot ROMs read the first valid block from NAND using the same command set this device implements (0x00/0x30 read, 0x80/0x10 program, 0x60 erase), so no custom boot code is needed. Dual-stack addressing is handled via standard address cycles. Design practice: mirror the bootloader across two blocks, mark bad blocks in the spare area, and assert WP during power transitions. The 2.7 V to 3.6 V window must be maintained during program operations to guarantee write integrity.

πŸ“±

Consumer Electronics Backup Storage

Digital photo frames, portable media players, and voice recorders use the K9MDG08U5M as internal backup storage, where 2 GB of MLC NAND covers typical content libraries at minimal cost. The TSOP1-48 dual-stacked package keeps the PCB small for slim enclosures, and its 3.3 V supply operates directly from single-cell Li-ion via a buck/LDO stage. Battery-powered designs benefit from low read-current asynchronous operation; sustained program operations should be budgeted for power consumption estimates. Playback devices tolerate MLC latency because content is buffered in RAM, making the slower tR and tPROG of MLC versus SLC non-critical for this use case.

What is the Samsung K9MDG08U5M?
The Samsung K9MDG08U5M is a 16 Gbit (2 GB) x8 MLC large-block NAND flash memory in a 48-pin TSOP1 dual-stacked package (12 mm x 20 mm). According to distributor datasheet listings, it operates from a 2.7 V to 3.6 V supply and uses a multiplexed 8-bit address/data bus with standard NAND control signals (CLE, ALE, WE, RE, R/B). The dual-stacked die construction doubles capacity within the standard TSOP48 NAND footprint.
What is the operating voltage range of K9MDG08U5M?
The K9MDG08U5M operates from a 2.7 V minimum to 3.6 V maximum single supply, per distributor datasheet summaries (datasheet4u.com). This covers the standard 3.3 V class NAND supply rail with tolerance for 3.0 V and 3.6 V systems. All VCC pins should be decoupled and the supply held within this window during program and erase operations to avoid corrupted writes or out-of-spec timing.
Where can I download the K9MDG08U5M datasheet PDF?
The K9MDG08U5M-PCB0 datasheet PDF is available from datasheet mirror sites such as datasheet.iiic.cc, which hosts the package-dimension section for the 48-pin TSOP1 dual stacked package (12 mm x 20 mm), and datasheet4u.com, which lists the electrical summary. Samsung also publishes the K9XXG08UXM family datasheet covering the K9MDG08U5M variants on its semiconductor site. Always verify the speed grade suffix (PCB0/PIB0) against your design.
What is the difference between K9MDG08U5M and K9HCG08U1M?
Both are Samsung MLC large-block NAND devices that appear together in the same preliminary datasheet family (K9XXG08UXM series). The K9MDG08U5M is a 16 Gbit dual-stacked part, while the K9HCG08U1M is a higher-density variant. They share the same TSOP1 48-pin footprint and x8 multiplexed interface, so the difference is primarily density and corresponding block/page count; firmware should read the device ID to configure block mapping correctly.
Is K9MDG08U5M a good drop-in replacement for K9LBG08U0M?
Yes, within the same Samsung preliminary datasheet the K9MDG08U5M, K9LBG08U0M, and K9HCG08U1M are listed together (K9XXG08UXM family), sharing the TSOP1 48-pin package and x8 NAND interface. Because they are same-package, pin-to-pin parts of the same family, replacement on the same PCB footprint is possible; however, densities differ, so the host flash translation layer must re-derive block addressing from the device ID before first use.
What is the best replacement equivalent for K9MDG08U5M?
The best drop-in alternatives are same-family Samsung parts: K9HCG08U1M and K9LBG08U0M, both explicitly listed alongside K9MDG08U5M in the Samsung preliminary FLASH MEMORY datasheet, plus K9LCG08U1M and K9XXG08UXM family variants. All share the TSOP1 48-pin footprint and 2.7-3.6 V x8 NAND interface. Cross-brand equivalents in TSOP48 NAND exist from other vendors, but pin mapping and device IDs must be validated before qualification.
K9MDG08U5M vs K9LCG08U1M - which should I choose?
Choose the K9MDG08U5M when 16 Gbit (2 GB) per package is sufficient and you want the dual-stacked TSOP1-48 form factor; choose the K9LCG08U1M when your design was validated on the K9LCG generation or when firmware device-ID tables already support it. Both are Samsung MLC large-block NAND in the same footprint with the same supply class, so the decision usually comes down to firmware support, availability, and price per gigabyte.
How much does the K9MDG08U5M cost?
As of 2026-09-04, third-party distributor listings price the K9MDG08U5M-PCB0 Samsung flash memory at approximately 35.50 to 45.00 USD per unit (seekic listing). XAIPART tier pricing starts at 35.50 USD at qty 1 and ranges up to 45.00 USD at qty 1000. Because this is a quotation-driven part at several distributors, request a quote for volume pricing above 1000 units.
Where to buy K9MDG08U5M online?
The K9MDG08U5M is available through quotation-based distributors including IC-Components, Y-IC, Chipdigger, Augswan, Nantian Electronics (ntchip.com), Veswin, and Jotrin Electronics, which list the K9MDG08U5M-PCB0 as active. XAIPART also accepts quote requests. Since authorized broker stock for this generation of Samsung MLC NAND is limited, request current inventory and lead time before committing a production schedule.
Is the K9MDG08U5M still in production?
According to the Jotrin Electronics product listing, the K9MDG08U5M-PCB0 is currently in Active production, and multiple distributors (Y-IC, Nantian, Veswin) list it as available for order. However, this is an older-generation MLC large-block NAND device; Samsung periodically issues PCN/EOL notices for the K9XXG08UXM family, so confirm lifecycle status with your supplier and consider last-time-buy planning for long-lifetime products.
What are the key specifications of the K9MDG08U5M that engineers should know?
The K9MDG08U5M is a 16 Gbit x8 MLC large-block NAND flash in a 48-pin TSOP1 dual-stacked 12 mm x 20 mm package, operating from 2.7 V to 3.6 V, with an asynchronous multiplexed address/data bus, CLE/ALE/WE/RE/R/B control, dual stacked dies, and one circuit per distributor data. Designers must implement ECC and wear-leveling because MLC cells have tighter margins than SLC. Page and block timing parameters should be taken from the official Samsung datasheet for the specific speed grade.
Can K9MDG08U5M be used in industrial applications?
Yes. Distributor Veswin specifies the K9MDG08U5M-PCB0 over an extended temperature range of -40C to +105C (TA), making it suitable for industrial data loggers, gateways, and embedded storage. Note that industrial use demands robust ECC, power-fail protection (WP asserted on brownout detection), and wear-leveling because MLC endurance is lower than SLC. Validate retention at your maximum operating temperature using the manufacturer datasheet retention figures.
Is K9MDG08U5M the same as K9MDG08U5M-PCB0?
K9MDG08U5M is the base device number; K9MDG08U5M-PCB0 (and -PIB0, -PCB0T) are ordering codes that specify speed grade, package finish, and packing. Distributor datasheets show K9MDG08U5M-PCB0/PIB0 sharing the same 48-pin TSOP1 dual-stacked package and silicon. They are electrically identical base devices, so cross-ordering between suffixes is generally safe, but always confirm the suffix against your firmware device-ID expectations.
What is the best cross-brand equivalent for the Samsung K9MDG08U5M?
No verified cross-brand pin-to-pin equivalent for the K9MDG08U5M appears in the provided cross-reference data; equivalent density in TSOP48 x8 MLC NAND was historically offered by vendors such as Micron and Toshiba/Kioxia, but pin mapping, device ID, and timing must be verified against their datasheets before qualification. The safest substitutes remain Samsung same-family parts (K9HCG08U1M, K9LBG08U0M, K9LCG08U1M) that share the identical footprint and command set.
Is K9MDG08U5M MLC NAND the same as SLC NAND in use?
No. The K9MDG08U5M is MLC NAND, storing 2 bits per cell, while SLC stores 1 bit per cell. MLC offers double density per die (enabling the 16 Gbit dual-stacked package) at lower cost per gigabyte, but has higher page program time, tighter read margins requiring stronger ECC, and lower program/erase endurance than SLC. Drop-in hardware replacement of SLC with this MLC part usually requires firmware and ECC configuration changes.

Engineering reference data for K9MDG08U5M β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the K9MDG08U5M when you need 16 Gbit (2 GB) of MLC storage in the standard TSOP1-48 NAND footprint with a 2.7 V to 3.6 V supply and extended-temperature operation (-40C to +105C per Veswin for the PCB0 grade) - typical for memory cards, USB drives, set-top boxes, and industrial loggers. Choose K9LBG08U0M for lower density and cost when 2 GB is over-provisioned. Choose K9HCG08U1M when more capacity is needed on the same PCB footprint. Choose K9LCG08U1M if your firmware already supports that generation or second-source availability matters. In all cases, budget for ECC and wear-leveling because this is MLC, not SLC, and verify the ordering suffix (PCB0/PIB0) and current lifecycle status with your supplier, since this is an older-generation Samsung family where stock increasingly flows through broker channels.

Comparison with Alternatives

Parameter This Product K9HCG08U1M K9LBG08U0M K9LCG08U1M K9XXG08U0M
Package 48-pin TSOP1 dual stacked (12 x 20 mm) 48-pin TSOP1 - same footprint 48-pin TSOP1 - same footprint 48-pin TSOP1 - same footprint 48-pin TSOP1 - same footprint
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics
Supply Voltage 2.7 V to 3.6 V 2.7 V to 3.6 V 2.7 V to 3.6 V 2.7 V to 3.6 V 2.7 V to 3.6 V
Cell Type MLC (2 bits/cell) MLC (2 bits/cell) MLC (2 bits/cell) MLC (2 bits/cell) MLC (2 bits/cell)
Interface x8 asynchronous multiplexed x8 asynchronous multiplexed x8 asynchronous multiplexed x8 asynchronous multiplexed x8 asynchronous multiplexed
Density Configuration 16 Gbit dual stacked Higher density family variant [DATA_NEEDED] [DATA_NEEDED] Family series (multiple densities)
Device ID / Generation K9MDG (K9XXG08UXM family) K9HCG (same family datasheet) K9LBG (same family datasheet) K9LCG (adjacent generation) Series designation
Price (qty 1) 35.50 USD (as of 2026-09-04) [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]

Key Differentiators

  • Dual-stacked die doubles density per footprint (vs K9LBG08U0M)
  • Extended-temperature industrial grade option (vs K9LCG08U1M)
  • Same-family pin compatibility for capacity tiering (vs K9HCG08U1M)

Design Notes

Hold VCC within the 2.7 V to 3.6 V window at all times, especially during program and erase operations. Distributor data confirms the 2.7 V min / 3.6 V max range. Add 0.1 uF ceramic decoupling at each VCC pin pair plus 4.7-10 uF bulk near the package, since stacked-die parts draw combined current from both dies during tPROG. Brownout during a program operation corrupts the target page - assert WP low whenever the supervisor detects the supply leaving the valid window, and complete recovery via bad-block checking after power-up.

Never treat this MLC part like SLC: page program must proceed sequentially within a block, partial-page programming is restricted, and read margins require ECC. Read the device ID at boot and configure the flash translation layer for the actual page/block geometry rather than hardcoding, which also makes the design portable across K9HCG08U1M, K9LBG08U0M, and K9LCG08U1M drop-in family parts. Verify the ordering suffix (PCB0 vs PIB0) matches your validated speed grade before release.

Route the 8-bit I/O bus as a matched group with series termination (22-33 ohm) close to the controller to control ringing on the 12 mm x 20 mm TSOP1 stubs. Keep CLE/ALE/WE/RE short and reference a solid ground plane; the R/B pin is open-drain and needs a pull-up (typically 10 kohm) to VCC. Avoid routing I/O lines under the package center where possible, and provide thermal relief vias near VSS pins to handle erase-current spikes from the dual stacked dies.

Compliance Information

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Unknown
Halogen Free
Unknown
Conflict Minerals
Unknown

Compliance status not stated in the provided web data. Verify RoHS/REACH status on the official Samsung product page for the specific ordering suffix (PCB0/PIB0) before design-in.

Data verified on: 2026-09-04 β€” data verified and curated by XAIPART's component engineering team

Related Searches

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Related Components & Terms

Samsung Electronics K9MDG08U5M K9MDG08U5M-PCB0 K9HCG08U1M K9LBG08U0M K9LCG08U1M K9XXG08UXM NAND flash MLC NAND large block NAND non-volatile memory TSOP1 48-pin TSOP48 surface mount package 2.7 V to 3.6 V supply ECC (error correction code) wear leveling bad block management flash translation layer USB flash drive memory card industrial data logger
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