K9MDG08U5M vs K9XXG08U0M Vergleich
Detaillierter Direktvergleich von K9MDG08U5M von Samsung Electronics und K9XXG08U0M von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K9MDG08U5M | K9XXG08U0M |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $35,50 | $5,60 |
| Speichertyp | MLC Large Block NAND Flash | NAND Flash |
| Density | 16 Gbit (2 GB) | 8 G-bit |
| Speicherorganisation | 16G x 8 bit | 1G x 8 bit |
| Cell Type | MLC (2 bits per cell) | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Schnittstelle | Asynchronous x8 multiplexed address/data | 8-bit parallel NAND (command/address/data multiplexed) |
| Gehäuse | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | 48-pin TSOP-I |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| RoHS-Status | unknown | [DATA_NEEDED: RoHS status] |
| Spare Area | — | 256 M-bit (per K9K8G08U0M) |
| Versorgungsspannung | — | 2.7 V to 3.6 V (3.3V device) |
| Page Read Time | — | 20 us |
| Access Interface Standard | — | Samsung legacy NAND command set |
| Bad Block Management | — | Factory bad block marking (host-managed ECC required) |
| ECC Requirement | — | External ECC by host controller |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |