K9XXG08U0M vs K9MDG08U5M Comparison
Detailed side-by-side comparison of K9XXG08U0M by Samsung Electronics and K9MDG08U5M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K9XXG08U0M | K9MDG08U5M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Obsolete | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.60 | $35.50 |
| Memory Type | NAND Flash | MLC Large Block NAND Flash |
| Density | 8 G-bit | 16 Gbit (2 GB) |
| Organization | 1G x 8 bit | 16G x 8 bit |
| Spare Area | 256 M-bit (per K9K8G08U0M) | — |
| Supply Voltage | 2.7 V to 3.6 V (3.3V device) | — |
| Interface | 8-bit parallel NAND (command/address/data multiplexed) | Asynchronous x8 multiplexed address/data |
| Page Read Time | 20 us | — |
| Package | 48-pin TSOP-I | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Standard | Samsung legacy NAND command set | — |
| Bad Block Management | Factory bad block marking (host-managed ECC required) | — |
| Cell Type | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) | MLC (2 bits per cell) |
| ECC Requirement | External ECC by host controller | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | unknown |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Program Time (tPROG) | — | [DATA_NEEDED: tPROG] |