K9XXG08U0M vs K9MDG08U5M Vergleich
Detaillierter Direktvergleich von K9XXG08U0M von Samsung Electronics und K9MDG08U5M von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K9XXG08U0M | K9MDG08U5M |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Obsolete | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,60 | $35,50 |
| Speichertyp | NAND Flash | MLC Large Block NAND Flash |
| Density | 8 G-bit | 16 Gbit (2 GB) |
| Speicherorganisation | 1G x 8 bit | 16G x 8 bit |
| Spare Area | 256 M-bit (per K9K8G08U0M) | — |
| Versorgungsspannung | 2.7 V to 3.6 V (3.3V device) | — |
| Schnittstelle | 8-bit parallel NAND (command/address/data multiplexed) | Asynchronous x8 multiplexed address/data |
| Page Read Time | 20 us | — |
| Gehäuse | 48-pin TSOP-I | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Standard | Samsung legacy NAND command set | — |
| Bad Block Management | Factory bad block marking (host-managed ECC required) | — |
| Cell Type | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) | MLC (2 bits per cell) |
| ECC Requirement | External ECC by host controller | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | unknown |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Program Time (tPROG) | — | [DATA_NEEDED: tPROG] |