M29F400FB55N3F2 vs M29W400FT55N3F Comparison
Detailed side-by-side comparison of M29F400FB55N3F2 by Micron Technology and M29W400FT55N3F by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29F400FB55N3F2 | M29W400FT55N3F |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.95 | $1.92 |
| Memory Type | NOR Flash | NOR Flash |
| Density | 4 Mbit (4194 kbit) | — |
| Organization | 256K x 16 / 512K x 8 | 4Mbit, block-organized, top boot block |
| Access Time | 55 ns | 55 ns |
| Supply Voltage | 5 V | [DATA_NEEDED: supply voltage range] |
| Interface | Parallel | Parallel |
| Boot Block | Bottom boot block | — |
| Operating Temperature | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Package | 48-TSOP I | 48-TSOP I |
| Mounting Type | Surface Mount | Surface Mount |
| Standard Package Quantity | 1500 units (Tape & Reel) | — |
| Active/Standby Current | [DATA_NEEDED: active and standby current] | — |
| Erase/Program Endurance | [DATA_NEEDED: endurance cycles] | — |
| Data Retention | [DATA_NEEDED: retention years] | [DATA_NEEDED: data retention] |
| VIO Range | [DATA_NEEDED: I/O voltage range] | — |
| RoHS Status | Compliant (lead-free build per F2 suffix) | [DATA_NEEDED: RoHS status] |
| Memory Size | — | 4 Mbit |
| Bus Configuration | — | x8 / x16 (BYTE-selectable) |
| Program/Erase | — | Block erase, word/byte program |
| Suspend/Resume | — | Erase/program suspend and resume |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Packaging | — | Tape & Reel (TR suffix) |
| Prefix F in MPN | — | Pb-free package suffix |