M29F400FB55N3F2 vs M29W400FT55N3F Vergleich
Detaillierter Direktvergleich von M29F400FB55N3F2 von Micron Technology und M29W400FT55N3F von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29F400FB55N3F2 | M29W400FT55N3F |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,95 | $1,92 |
| Speichertyp | NOR Flash | NOR Flash |
| Density | 4 Mbit (4194 kbit) | — |
| Speicherorganisation | 256K x 16 / 512K x 8 | 4Mbit, block-organized, top boot block |
| Access Time | 55 ns | 55 ns |
| Versorgungsspannung | 5 V | [DATA_NEEDED: supply voltage range] |
| Schnittstelle | Parallel | Parallel |
| Boot Block | Bottom boot block | — |
| Betriebstemperatur | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Gehäuse | 48-TSOP I | 48-TSOP I |
| Montageart | Surface Mount | Surface Mount |
| Standard Package Quantity | 1500 units (Tape & Reel) | — |
| Active/Standby Current | [DATA_NEEDED: active and standby current] | — |
| Erase/Program Endurance | [DATA_NEEDED: endurance cycles] | — |
| Data Retention | [DATA_NEEDED: retention years] | [DATA_NEEDED: data retention] |
| VIO Range | [DATA_NEEDED: I/O voltage range] | — |
| RoHS-Status | Compliant (lead-free build per F2 suffix) | [DATA_NEEDED: RoHS status] |
| Speichergröße | — | 4 Mbit |
| Bus Configuration | — | x8 / x16 (BYTE-selectable) |
| Program/Erase | — | Block erase, word/byte program |
| Suspend/Resume | — | Erase/program suspend and resume |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Packaging | — | Tape & Reel (TR suffix) |
| Prefix F in MPN | — | Pb-free package suffix |