M29F400FT55N3F2 vs M29F200FT55N3F2 Comparison
Detailed side-by-side comparison of M29F400FT55N3F2 by Micron Technology and M29F200FT55N3F2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ Active
Specification Comparison
| Parameter | M29F400FT55N3F2 | M29F200FT55N3F2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | EEPROM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.51 | $0.00 |
| Memory Type | NOR Flash (SLC) | NOR Flash, Parallel |
| Memory Size | 4 Mbit | — |
| Organization | 256K x 16 | 256K x 8-bit / 128K x 16-bit |
| Interface | Parallel | Parallel, BYTE pin selects 8/16-bit bus |
| Access Time | 55 ns | 55 ns |
| Supply Voltage | 5 V | — |
| Block Architecture | Top boot block | — |
| Package | 44-SO (SOP-44) | 48-pin TSOP |
| Mounting Type | Surface Mount | Surface Mount |
| Temperature Grade | Auto Grade 3, up to +125C (per Micron ordering code) | — |
| Compliance Suffix | F2 (RoHS-compliant, lead-free plating) | — |
| Programming Voltage | Single supply (no 12 V VPP required) | — |
| Technology | Floating-gate NOR cell, charge-pump program/erase | — |
| Max Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| Operating Temperature | [DATA_NEEDED: min operating temperature] | -40C to +125C |
| Density | — | 2 Mbit (2097 kbits) |
| Supply Voltage (VCC) | — | 5 V |
| Number of Words | — | 128 K |
| Bits per Word | — | 16 bits |
| Boot Block Architecture | — | Top Boot Block |
| Program/Erase | — | Embedded byte/word program algorithms |
| Packaging | — | Tape & Reel (TR suffix) |
| RoHS Status | — | [DATA_NEEDED: RoHS status] |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |