M29F400FT55N3F2 vs M29F200FT55N3F2 对比
详细并排对比 M29F400FT55N3F2 出自 Micron Technology 和 M29F200FT55N3F2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29F400FT55N3F2 | M29F200FT55N3F2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | EEPROM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.51 | $0.00 |
| 存储器类型 | NOR Flash (SLC) | NOR Flash, Parallel |
| 存储容量 | 4 Mbit | — |
| 存储组织 | 256K x 16 | 256K x 8-bit / 128K x 16-bit |
| 接口 | Parallel | Parallel, BYTE pin selects 8/16-bit bus |
| Access Time | 55 ns | 55 ns |
| 电源电压 | 5 V | — |
| Block Architecture | Top boot block | — |
| 封装 | 44-SO (SOP-44) | 48-pin TSOP |
| 安装类型 | Surface Mount | Surface Mount |
| Temperature Grade | Auto Grade 3, up to +125C (per Micron ordering code) | — |
| Compliance Suffix | F2 (RoHS-compliant, lead-free plating) | — |
| Programming Voltage | Single supply (no 12 V VPP required) | — |
| Technology | Floating-gate NOR cell, charge-pump program/erase | — |
| Max Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| 工作温度 | [DATA_NEEDED: min operating temperature] | -40C to +125C |
| Density | — | 2 Mbit (2097 kbits) |
| Supply Voltage (VCC) | — | 5 V |
| Number of Words | — | 128 K |
| Bits per Word | — | 16 bits |
| Boot Block Architecture | — | Top Boot Block |
| Program/Erase | — | Embedded byte/word program algorithms |
| Packaging | — | Tape & Reel (TR suffix) |
| RoHS 状态 | — | [DATA_NEEDED: RoHS status] |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |