M29F400FT55N3F2 vs M29F200FT55N3F2 Vergleich
Detaillierter Direktvergleich von M29F400FT55N3F2 von Micron Technology und M29F200FT55N3F2 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ AktivSpezifikationsvergleich
| Parameter | M29F400FT55N3F2 | M29F200FT55N3F2 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | EEPROM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,51 | $0,00 |
| Speichertyp | NOR Flash (SLC) | NOR Flash, Parallel |
| Speichergröße | 4 Mbit | — |
| Speicherorganisation | 256K x 16 | 256K x 8-bit / 128K x 16-bit |
| Schnittstelle | Parallel | Parallel, BYTE pin selects 8/16-bit bus |
| Access Time | 55 ns | 55 ns |
| Versorgungsspannung | 5 V | — |
| Block Architecture | Top boot block | — |
| Gehäuse | 44-SO (SOP-44) | 48-pin TSOP |
| Montageart | Surface Mount | Surface Mount |
| Temperature Grade | Auto Grade 3, up to +125C (per Micron ordering code) | — |
| Compliance Suffix | F2 (RoHS-compliant, lead-free plating) | — |
| Programming Voltage | Single supply (no 12 V VPP required) | — |
| Technology | Floating-gate NOR cell, charge-pump program/erase | — |
| Max Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| Betriebstemperatur | [DATA_NEEDED: min operating temperature] | -40C to +125C |
| Density | — | 2 Mbit (2097 kbits) |
| Supply Voltage (VCC) | — | 5 V |
| Number of Words | — | 128 K |
| Bits per Word | — | 16 bits |
| Boot Block Architecture | — | Top Boot Block |
| Program/Erase | — | Embedded byte/word program algorithms |
| Packaging | — | Tape & Reel (TR suffix) |
| RoHS-Status | — | [DATA_NEEDED: RoHS status] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |