M29F800FT55M3E2 vs M29F800FB55N3F2 Comparison

Detailed side-by-side comparison of M29F800FT55M3E2 by Micron Technology and M29F800FB55N3F2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
M29F800FT55M3E2 M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 ✓ Active
Micron Technology
M29F800FB55N3F2 M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 ✓ Active

Specification Comparison

Parameter M29F800FT55M3E2 M29F800FB55N3F2
Brand Micron Technology Micron Technology
Category EEPROM Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.95 $2.47
Memory Type NOR Flash —
Memory Size 8 Mbit —
Organization 512K x 16 bit 1M x 8 / 512K x 16
Interface Parallel —
Access Time 55 ns 55 ns
Supply Voltage 5 V 5 V
Operating Temperature -40C to +125C -40C to +125C
Boot Block Location Top boot block —
Program/Erase Cycles 100,000 per block —
Program Algorithm Embedded byte/word program —
Erase Features Erase suspend and resume —
Standby Mode Automatic standby, low power —
Identification Electronic signature —
Package 44-SO (SOP) —
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (E suffix) Compliant (lead-free terminations)
Density 8389 kbits —
Memory Density — 8389 kbits (8 Mbit)
Interface Type — Parallel NOR
Boot Block Architecture — Bottom Boot Block
Program/Erase Controller — Embedded byte/word program algorithms
Temperature Grade — Automotive (AEC-Q100)
Package Type — 48-pin TSOP1
Package Shape — Rectangular (JESD designation TSOP1)
Terminal Count — 48
JESD-609 Termination Code — e3 (lead-free)
Packaging — Tape & Reel (T/R)

Datasheets & Resources

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