M29F800FT55M3E2 vs M29F800FB55N3F2 对比

详细并排对比 M29F800FT55M3E2 出自 Micron Technology 和 M29F800FB55N3F2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29F800FT55M3E2 M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 ✓ 量产中
Micron Technology
M29F800FB55N3F2 M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 ✓ 量产中

规格对比

参数 M29F800FT55M3E2 M29F800FB55N3F2
品牌 Micron Technology Micron Technology
分类 EEPROM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.95 $2.47
存储器类型 NOR Flash —
存储容量 8 Mbit —
存储组织 512K x 16 bit 1M x 8 / 512K x 16
接口 Parallel —
Access Time 55 ns 55 ns
电源电压 5 V 5 V
工作温度 -40C to +125C -40C to +125C
Boot Block Location Top boot block —
Program/Erase Cycles 100,000 per block —
Program Algorithm Embedded byte/word program —
Erase Features Erase suspend and resume —
Standby Mode Automatic standby, low power —
Identification Electronic signature —
封装 44-SO (SOP) —
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant (E suffix) Compliant (lead-free terminations)
Density 8389 kbits —
Memory Density — 8389 kbits (8 Mbit)
接口类型 — Parallel NOR
Boot Block Architecture — Bottom Boot Block
Program/Erase Controller — Embedded byte/word program algorithms
Temperature Grade — Automotive (AEC-Q100)
Package Type — 48-pin TSOP1
Package Shape — Rectangular (JESD designation TSOP1)
Terminal Count — 48
JESD-609 Termination Code — e3 (lead-free)
Packaging — Tape & Reel (T/R)

数据手册与资源

浏览全部产品 创建 BOM 获取报价