M29F800FT55M3F2 vs M29F800FT55N3F2 Comparison
Detailed side-by-side comparison of M29F800FT55M3F2 by Micron Technology and M29F800FT55N3F2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
M29F800FT55M3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FT55M3F2 ✓ Active
Specification Comparison
| Parameter | M29F800FT55M3F2 | M29F800FT55N3F2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.10 | $0.78 |
| Memory Type | Parallel NOR Flash | NOR Flash, Parallel |
| Density | 8 Mbit (8389 kbits) | — |
| Organization | 512K x 16 / 1M x 8 | 1M x 8 bit / 512K x 16 bit |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Boot Block Position | Top boot block | — |
| Programming Interface | Embedded program/erase controller | — |
| Operating Temperature | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Package | 44-pin SO (SOP) | 48-pin TSOP |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | Tape & Reel (T/R) |
| Interface | Parallel, x8/x16 selectable | Parallel |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| RoHS Status | Compliant (lead-free suffix F2) | [DATA_NEEDED: RoHS status] |
| Memory Size | — | 8 Mbit |
| Supply Voltage | — | 5 V (single supply) |
| Boot Block Architecture | — | Top boot block (T) |
| Programming Voltage | — | 5.0 V VCC (no 12 V VPP required) |
| Erase Block Size | — | [DATA_NEEDED: block size] |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: ICC read] |