M29F800FT55M3F2 vs M29F800FT55N3F2 对比
详细并排对比 M29F800FT55M3F2 出自 Micron Technology 和 M29F800FT55N3F2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29F800FT55M3F2 | M29F800FT55N3F2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.10 | $0.78 |
| 存储器类型 | Parallel NOR Flash | NOR Flash, Parallel |
| Density | 8 Mbit (8389 kbits) | — |
| 存储组织 | 512K x 16 / 1M x 8 | 1M x 8 bit / 512K x 16 bit |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Boot Block Position | Top boot block | — |
| Programming Interface | Embedded program/erase controller | — |
| 工作温度 | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| 封装 | 44-pin SO (SOP) | 48-pin TSOP |
| 安装类型 | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | Tape & Reel (T/R) |
| 接口 | Parallel, x8/x16 selectable | Parallel |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| RoHS 状态 | Compliant (lead-free suffix F2) | [DATA_NEEDED: RoHS status] |
| 存储容量 | — | 8 Mbit |
| 电源电压 | — | 5 V (single supply) |
| Boot Block Architecture | — | Top boot block (T) |
| Programming Voltage | — | 5.0 V VCC (no 12 V VPP required) |
| Erase Block Size | — | [DATA_NEEDED: block size] |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: ICC read] |