M29F800FT55M3F2 vs M29F800FT55N3F2 Vergleich
Detaillierter Direktvergleich von M29F800FT55M3F2 von Micron Technology und M29F800FT55N3F2 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
M29F800FT55M3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FT55M3F2 ✓ Aktiv
Spezifikationsvergleich
| Parameter | M29F800FT55M3F2 | M29F800FT55N3F2 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,10 | $0,78 |
| Speichertyp | Parallel NOR Flash | NOR Flash, Parallel |
| Density | 8 Mbit (8389 kbits) | — |
| Speicherorganisation | 512K x 16 / 1M x 8 | 1M x 8 bit / 512K x 16 bit |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Boot Block Position | Top boot block | — |
| Programming Interface | Embedded program/erase controller | — |
| Betriebstemperatur | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Gehäuse | 44-pin SO (SOP) | 48-pin TSOP |
| Montageart | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | Tape & Reel (T/R) |
| Schnittstelle | Parallel, x8/x16 selectable | Parallel |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| RoHS-Status | Compliant (lead-free suffix F2) | [DATA_NEEDED: RoHS status] |
| Speichergröße | — | 8 Mbit |
| Versorgungsspannung | — | 5 V (single supply) |
| Boot Block Architecture | — | Top boot block (T) |
| Programming Voltage | — | 5.0 V VCC (no 12 V VPP required) |
| Erase Block Size | — | [DATA_NEEDED: block size] |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: ICC read] |