M29F800FT55N3F2 vs M29F800FB55N3F2 Comparison
Detailed side-by-side comparison of M29F800FT55N3F2 by Micron Technology and M29F800FB55N3F2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FB55N3F2 ✓ ActiveSpecification Comparison
| Parameter | M29F800FT55N3F2 | M29F800FB55N3F2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $2.47 |
| Memory Type | NOR Flash, Parallel | — |
| Memory Size | 8 Mbit | — |
| Organization | 1M x 8 bit / 512K x 16 bit | 1M x 8 / 512K x 16 |
| Supply Voltage | 5 V (single supply) | 5 V |
| Access Time | 55 ns | 55 ns |
| Interface | Parallel | — |
| Boot Block Architecture | Top boot block (T) | Bottom Boot Block |
| Programming Voltage | 5.0 V VCC (no 12 V VPP required) | — |
| Package | 48-pin TSOP | — |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | Tape & Reel (T/R) |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Erase Block Size | [DATA_NEEDED: block size] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance cycles] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant (lead-free terminations) |
| Active Read Current | [DATA_NEEDED: ICC read] | — |
| Memory Density | — | 8389 kbits (8 Mbit) |
| Interface Type | — | Parallel NOR |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Temperature Grade | — | Automotive (AEC-Q100) |
| Package Type | — | 48-pin TSOP1 |
| Package Shape | — | Rectangular (JESD designation TSOP1) |
| Terminal Count | — | 48 |
| JESD-609 Termination Code | — | e3 (lead-free) |