M29W064FT70N3E vs M29W128GL70N3E Comparison
Detailed side-by-side comparison of M29W064FT70N3E by Micron Technology and M29W128GL70N3E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29W064FT70N3E | M29W128GL70N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Flash |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $8.65 |
| Memory Type | NOR Flash (Parallel) | NOR Flash (Parallel) |
| Density | 64 Mbit | 128 Mbit |
| Organization | 8 Mb x8 or 4 Mb x16 | 16M x8 / 8M x16 |
| Interface | Parallel, CFI compliant | Parallel |
| Access Time | 70 ns | 70 ns |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V (3V/3.3V class) |
| Boot Block Architecture | Top boot block (FT) | — |
| Operating Temperature | -40C to +85C | -40C to +125C |
| Package | 48-TSOP | 56-pin TSOP |
| Mounting Type | Surface Mount | Surface Mount |
| Programming Voltage | Single 3 V supply (no separate VPP required) | — |
| Erase/Program Method | Command-set page programming, block erase | — |
| Product Longevity Program | No | — |
| Program/Erase Cycles | [DATA_NEEDED: program/erase endurance cycles] | — |
| Active Read Current | [DATA_NEEDED: active read supply current] | — |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| RoHS Status | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Boot Block Configuration | — | Bottom boot (GL suffix) |
| Packaging | — | Tray |
| Automotive Qualification | — | Automotive grade ordering code (N3E) |
| Bus Width Mode | — | Software-selectable x8/x16 (BYTE# pin) |
| Program/Erase Endurance | — | [DATA_NEEDED: program/erase cycles] |