M29W064FT70N3E vs M29W128GL70N3E 对比
详细并排对比 M29W064FT70N3E 出自 Micron Technology 和 M29W128GL70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29W064FT70N3E | M29W128GL70N3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Flash |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $8.65 |
| 存储器类型 | NOR Flash (Parallel) | NOR Flash (Parallel) |
| Density | 64 Mbit | 128 Mbit |
| 存储组织 | 8 Mb x8 or 4 Mb x16 | 16M x8 / 8M x16 |
| 接口 | Parallel, CFI compliant | Parallel |
| Access Time | 70 ns | 70 ns |
| 电源电压 | 2.7 V to 3.6 V | 2.7 V to 3.6 V (3V/3.3V class) |
| Boot Block Architecture | Top boot block (FT) | — |
| 工作温度 | -40C to +85C | -40C to +125C |
| 封装 | 48-TSOP | 56-pin TSOP |
| 安装类型 | Surface Mount | Surface Mount |
| Programming Voltage | Single 3 V supply (no separate VPP required) | — |
| Erase/Program Method | Command-set page programming, block erase | — |
| Product Longevity Program | No | — |
| Program/Erase Cycles | [DATA_NEEDED: program/erase endurance cycles] | — |
| Active Read Current | [DATA_NEEDED: active read supply current] | — |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| RoHS 状态 | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Boot Block Configuration | — | Bottom boot (GL suffix) |
| Packaging | — | Tray |
| Automotive Qualification | — | Automotive grade ordering code (N3E) |
| Bus Width Mode | — | Software-selectable x8/x16 (BYTE# pin) |
| Program/Erase Endurance | — | [DATA_NEEDED: program/erase cycles] |