M29W064FT70N3E vs M29W128GL70N3E Comparación
Comparación detallada lado a lado de M29W064FT70N3E por Micron Technology y M29W128GL70N3E por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M29W064FT70N3E | M29W128GL70N3E |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Flash |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $8,65 |
| Tipo de memoria | NOR Flash (Parallel) | NOR Flash (Parallel) |
| Density | 64 Mbit | 128 Mbit |
| Organización de memoria | 8 Mb x8 or 4 Mb x16 | 16M x8 / 8M x16 |
| Interfaz | Parallel, CFI compliant | Parallel |
| Access Time | 70 ns | 70 ns |
| Tensión de alimentación | 2.7 V to 3.6 V | 2.7 V to 3.6 V (3V/3.3V class) |
| Boot Block Architecture | Top boot block (FT) | — |
| Temperatura de funcionamiento | -40C to +85C | -40C to +125C |
| Encapsulado | 48-TSOP | 56-pin TSOP |
| Tipo de montaje | Surface Mount | Surface Mount |
| Programming Voltage | Single 3 V supply (no separate VPP required) | — |
| Erase/Program Method | Command-set page programming, block erase | — |
| Product Longevity Program | No | — |
| Program/Erase Cycles | [DATA_NEEDED: program/erase endurance cycles] | — |
| Active Read Current | [DATA_NEEDED: active read supply current] | — |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Estado RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Boot Block Configuration | — | Bottom boot (GL suffix) |
| Packaging | — | Tray |
| Automotive Qualification | — | Automotive grade ordering code (N3E) |
| Bus Width Mode | — | Software-selectable x8/x16 (BYTE# pin) |
| Program/Erase Endurance | — | [DATA_NEEDED: program/erase cycles] |