M29W064FT70N3F vs M29W400FB55N3F Comparison
Detailed side-by-side comparison of M29W064FT70N3F by Micron Technology and M29W400FB55N3F by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29W064FT70N3F | M29W400FB55N3F |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.30 | $2.55 |
| Memory Type | NOR Flash | NOR Flash |
| Density | 64 Mbit | — |
| Organization | 8 Mbit x8 / 4 Mbit x16 | 512K x8 / 256K x16 |
| Access Time | 70 ns | 55 ns |
| Supply Voltage (VCC) | up to 3.6 V for program, erase, read | 2.7 V to 3.6 V |
| VPP Fast Program Voltage | 12 V (optional) | — |
| Interface | Parallel | Parallel (asynchronous) |
| Boot Block Configuration | Top boot block (FT) | — |
| Operating Temperature | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Package | 48-TSOP I | 48-pin TSOP I (12 x 20 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Programming Method | Command set / data polling / toggle bit | — |
| Block Protection | Yes, with temporary unprotection | — |
| Product Longevity Program | No | — |
| Width | x8/x16 | — |
| RoHS Status | unknown | — |
| Memory Size | — | 4 Mbit |
| Program/Erase Supply | — | Single 2.7 V to 3.6 V |
| Byte/Word Select | — | BYTE# pin |
| Block Architecture | — | Boot block with hardware sector protection |
| Program Suspend/Erase Suspend | — | Supported |
| Packaging | — | Tape & Reel (TR) |
| Lead-Free / RoHS | — | Yes (F suffix = lead-free RoHS-compliant) |
| Endurance | — | [DATA_NEEDED: program/erase cycles per block] |
| Data Retention | — | [DATA_NEEDED: retention years] |