M29W064FT70N3F vs M29W400FB55N3F 对比
详细并排对比 M29W064FT70N3F 出自 Micron Technology 和 M29W400FB55N3F 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29W064FT70N3F | M29W400FB55N3F |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.30 | $2.55 |
| 存储器类型 | NOR Flash | NOR Flash |
| Density | 64 Mbit | — |
| 存储组织 | 8 Mbit x8 / 4 Mbit x16 | 512K x8 / 256K x16 |
| Access Time | 70 ns | 55 ns |
| Supply Voltage (VCC) | up to 3.6 V for program, erase, read | 2.7 V to 3.6 V |
| VPP Fast Program Voltage | 12 V (optional) | — |
| 接口 | Parallel | Parallel (asynchronous) |
| Boot Block Configuration | Top boot block (FT) | — |
| 工作温度 | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| 封装 | 48-TSOP I | 48-pin TSOP I (12 x 20 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Programming Method | Command set / data polling / toggle bit | — |
| Block Protection | Yes, with temporary unprotection | — |
| Product Longevity Program | No | — |
| Width | x8/x16 | — |
| RoHS 状态 | unknown | — |
| 存储容量 | — | 4 Mbit |
| Program/Erase Supply | — | Single 2.7 V to 3.6 V |
| Byte/Word Select | — | BYTE# pin |
| Block Architecture | — | Boot block with hardware sector protection |
| Program Suspend/Erase Suspend | — | Supported |
| Packaging | — | Tape & Reel (TR) |
| Lead-Free / RoHS | — | Yes (F suffix = lead-free RoHS-compliant) |
| Endurance | — | [DATA_NEEDED: program/erase cycles per block] |
| Data Retention | — | [DATA_NEEDED: retention years] |