M29W128GH70N3F vs M29W640GB70N3F Comparison
Detailed side-by-side comparison of M29W128GH70N3F by Micron Technology and M29W640GB70N3F by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29W128GH70N3F | M29W640GB70N3F |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $2.66 |
| Memory Type | NOR Flash | NOR Flash, Parallel |
| Density | 128 Mbit (16 MB) | 64 Mb (8 MB) |
| Interface | Parallel | — |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | 3 V (2.7 V to 3.6 V) | — |
| Organization | 8M x16 / 16M x8 | x8 / x16 |
| Operating Temperature | -40C to +125C | -40C to +125C |
| Package | 56-TSOP | 48-TSOP I |
| Mounting Type | Surface Mount | Surface Mount |
| Block Architecture | [DATA_NEEDED: block size/organization] | Uniform block (GB variant) |
| Erase/Program Cycles | [DATA_NEEDED: endurance rating] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| CFI Compliant | Yes | — |
| Supply Current - Read | [DATA_NEEDED: ICC read] | — |
| Supply Current - Program/Erase | [DATA_NEEDED: ICC write] | — |
| RoHS Status | Compliant | Compliant (per JLCPCB listing) |
| Programming Voltage | Single supply (no separate VPP required) | — |
| Supply Voltage | — | 2.7 V to 3.6 V |
| Qualification | — | Automotive AEC-Q100 |
| Program/Erase Interface | — | Parallel command set with status polling |
| Part Status | — | Obsolete |
| Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Read Current | — | [DATA_NEEDED: active read current] |