M29W128GH70N3F vs M29W640GB70N3F Vergleich
Detaillierter Direktvergleich von M29W128GH70N3F von Micron Technology und M29W640GB70N3F von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W128GH70N3F | M29W640GB70N3F |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $2,66 |
| Speichertyp | NOR Flash | NOR Flash, Parallel |
| Density | 128 Mbit (16 MB) | 64 Mb (8 MB) |
| Schnittstelle | Parallel | — |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | 3 V (2.7 V to 3.6 V) | — |
| Speicherorganisation | 8M x16 / 16M x8 | x8 / x16 |
| Betriebstemperatur | -40C to +125C | -40C to +125C |
| Gehäuse | 56-TSOP | 48-TSOP I |
| Montageart | Surface Mount | Surface Mount |
| Block Architecture | [DATA_NEEDED: block size/organization] | Uniform block (GB variant) |
| Erase/Program Cycles | [DATA_NEEDED: endurance rating] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| CFI Compliant | Yes | — |
| Supply Current - Read | [DATA_NEEDED: ICC read] | — |
| Supply Current - Program/Erase | [DATA_NEEDED: ICC write] | — |
| RoHS-Status | Compliant | Compliant (per JLCPCB listing) |
| Programming Voltage | Single supply (no separate VPP required) | — |
| Versorgungsspannung | — | 2.7 V to 3.6 V |
| Qualification | — | Automotive AEC-Q100 |
| Program/Erase Interface | — | Parallel command set with status polling |
| Part Status | — | Obsolete |
| Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Read Current | — | [DATA_NEEDED: active read current] |