M29W128GH70N3F vs M29W640GB70N3F Comparaison
Comparaison détaillée côte à côte de M29W128GH70N3F par Micron Technology et M29W640GB70N3F par Micron Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | M29W128GH70N3F | M29W640GB70N3F |
|---|---|---|
| Marque | Micron Technology | Micron Technology |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $2,66 |
| Type de mémoire | NOR Flash | NOR Flash, Parallel |
| Density | 128 Mbit (16 MB) | 64 Mb (8 MB) |
| Interface | Parallel | — |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | 3 V (2.7 V to 3.6 V) | — |
| Organisation de la mémoire | 8M x16 / 16M x8 | x8 / x16 |
| Température de fonctionnement | -40C to +125C | -40C to +125C |
| Boîtier | 56-TSOP | 48-TSOP I |
| Type de montage | Surface Mount | Surface Mount |
| Block Architecture | [DATA_NEEDED: block size/organization] | Uniform block (GB variant) |
| Erase/Program Cycles | [DATA_NEEDED: endurance rating] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| CFI Compliant | Yes | — |
| Supply Current - Read | [DATA_NEEDED: ICC read] | — |
| Supply Current - Program/Erase | [DATA_NEEDED: ICC write] | — |
| Statut RoHS | Compliant | Compliant (per JLCPCB listing) |
| Programming Voltage | Single supply (no separate VPP required) | — |
| Tension d'alimentation | — | 2.7 V to 3.6 V |
| Qualification | — | Automotive AEC-Q100 |
| Program/Erase Interface | — | Parallel command set with status polling |
| Part Status | — | Obsolete |
| Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Read Current | — | [DATA_NEEDED: active read current] |