M29W128GL70N3E vs M29W064FT70N3E Comparison
Detailed side-by-side comparison of M29W128GL70N3E by Micron Technology and M29W064FT70N3E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29W128GL70N3E | M29W064FT70N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Flash | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.65 | $0.00 |
| Memory Type | NOR Flash (Parallel) | NOR Flash (Parallel) |
| Density | 128 Mbit | 64 Mbit |
| Organization | 16M x8 / 8M x16 | 8 Mb x8 or 4 Mb x16 |
| Access Time | 70 ns | 70 ns |
| Supply Voltage | 2.7 V to 3.6 V (3V/3.3V class) | 2.7 V to 3.6 V |
| Interface | Parallel | Parallel, CFI compliant |
| Boot Block Configuration | Bottom boot (GL suffix) | — |
| Operating Temperature | -40C to +125C | -40C to +85C |
| Package | 56-pin TSOP | 48-TSOP |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Automotive Qualification | Automotive grade ordering code (N3E) | — |
| Bus Width Mode | Software-selectable x8/x16 (BYTE# pin) | — |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Boot Block Architecture | — | Top boot block (FT) |
| Programming Voltage | — | Single 3 V supply (no separate VPP required) |
| Erase/Program Method | — | Command-set page programming, block erase |
| Product Longevity Program | — | No |
| Program/Erase Cycles | — | [DATA_NEEDED: program/erase endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: active read supply current] |