M29W128GL70N3E vs M29W064FT70N3E Vergleich
Detaillierter Direktvergleich von M29W128GL70N3E von Micron Technology und M29W064FT70N3E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W128GL70N3E | M29W064FT70N3E |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Flash | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $8,65 | $0,00 |
| Speichertyp | NOR Flash (Parallel) | NOR Flash (Parallel) |
| Density | 128 Mbit | 64 Mbit |
| Speicherorganisation | 16M x8 / 8M x16 | 8 Mb x8 or 4 Mb x16 |
| Access Time | 70 ns | 70 ns |
| Versorgungsspannung | 2.7 V to 3.6 V (3V/3.3V class) | 2.7 V to 3.6 V |
| Schnittstelle | Parallel | Parallel, CFI compliant |
| Boot Block Configuration | Bottom boot (GL suffix) | — |
| Betriebstemperatur | -40C to +125C | -40C to +85C |
| Gehäuse | 56-pin TSOP | 48-TSOP |
| Montageart | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Automotive Qualification | Automotive grade ordering code (N3E) | — |
| Bus Width Mode | Software-selectable x8/x16 (BYTE# pin) | — |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Boot Block Architecture | — | Top boot block (FT) |
| Programming Voltage | — | Single 3 V supply (no separate VPP required) |
| Erase/Program Method | — | Command-set page programming, block erase |
| Product Longevity Program | — | No |
| Program/Erase Cycles | — | [DATA_NEEDED: program/erase endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: active read supply current] |