M29W256GH70N3E vs M29W128GH70N3E Comparison
Detailed side-by-side comparison of M29W256GH70N3E by Micron Technology and M29W128GH70N3E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29W256GH70N3E | M29W128GH70N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.60 | $0.00 |
| Memory Type | NOR Flash (Parallel) | NOR Flash |
| Density | 256 Mbit (32 MB) | — |
| Organization | 32M x 8 / 16M x 16 | 8M x 16 / 16M x 8 |
| Access Time | 70 ns | 70 ns |
| Supply Voltage | 3 V | 2.7 V to 3.6 V |
| Interface | Parallel (asynchronous) | Parallel (asynchronous) |
| Package | 56-TSOP | 56-TSOP |
| Operating Temperature | -40C to +125C | -40C to +125C |
| Mounting Type | Surface Mount | Surface Mount |
| Data Bus Width | 8/16 bit (BYTE# selectable) | 16 bit (byte/word selectable) |
| Programming Type | Command-set program/erase, block organized | — |
| Common Flash Interface | Yes (CFI) | — |
| Product Longevity Program | No (per family data) | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Memory Size | — | 128 Mbit (16 MB) |
| Temperature Grade | — | Automotive |
| Number of Terminals | — | 56 |
| Memory Density | — | 131072 kbit |
| Programming | — | Command-sequence program/erase with status polling |
| Application Segment | — | Automotive / Industrial code storage |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance] |