M29W256GH70N3E vs M29W128GH70N3E Vergleich
Detaillierter Direktvergleich von M29W256GH70N3E von Micron Technology und M29W128GH70N3E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W256GH70N3E | M29W128GH70N3E |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $6,60 | $0,00 |
| Speichertyp | NOR Flash (Parallel) | NOR Flash |
| Density | 256 Mbit (32 MB) | — |
| Speicherorganisation | 32M x 8 / 16M x 16 | 8M x 16 / 16M x 8 |
| Access Time | 70 ns | 70 ns |
| Versorgungsspannung | 3 V | 2.7 V to 3.6 V |
| Schnittstelle | Parallel (asynchronous) | Parallel (asynchronous) |
| Gehäuse | 56-TSOP | 56-TSOP |
| Betriebstemperatur | -40C to +125C | -40C to +125C |
| Montageart | Surface Mount | Surface Mount |
| Datenbusbreite | 8/16 bit (BYTE# selectable) | 16 bit (byte/word selectable) |
| Programming Type | Command-set program/erase, block organized | — |
| Common Flash Interface | Yes (CFI) | — |
| Product Longevity Program | No (per family data) | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Speichergröße | — | 128 Mbit (16 MB) |
| Temperature Grade | — | Automotive |
| Number of Terminals | — | 56 |
| Memory Density | — | 131072 kbit |
| Programming | — | Command-sequence program/erase with status polling |
| Application Segment | — | Automotive / Industrial code storage |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance] |