M29W320DT70N3E vs M29DW323DB70N3E Comparison

Detailed side-by-side comparison of M29W320DT70N3E by Micron Technology and M29DW323DB70N3E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
M29W320DT70N3E M29W320DT70N3E - 32Mbit NOR Flash 70ns 48-TSOP | Micron

M29W320DT70N3E - 32Mbit NOR Flash 70ns 48-TSOP | Micron

M29W320DT70N3E ✓ Active
Micron Technology
M29DW323DB70N3E M29DW323DB70N3E - 32Mb NOR Flash 70ns 48-TSOP | Micron

M29DW323DB70N3E - 32Mb NOR Flash 70ns 48-TSOP | Micron

M29DW323DB70N3E ✓ Active

Specification Comparison

Parameter M29W320DT70N3E M29DW323DB70N3E
Brand Micron Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.05 $2.55
Memory Type NOR Flash Flash - NOR
Memory Size 32 Mbit —
Organization 4M x8 / 2M x16 —
Interface Parallel Parallel
Access Time 70 ns 70 ns
Supply Voltage (VCC) 2.7 V to 3.6 V —
Read Current (typical) 10 mA —
Boot Block Architecture Top boot (DT suffix) —
Boot Region 16 KByte boot block, two 8 KByte parameter blocks, 32 KByte small main block —
Package 48-TSOP I 48-TSOP I
Package Length 18.4 mm —
Mounting Type Surface Mount Surface Mount
MSL Level 3 (168 Hours) —
Peak Reflow Temperature Time 30 s —
Packaging Tray —
Operating Temperature [DATA_NEEDED: operating temperature range] -40C to +125C
Program/Erase Cycles [DATA_NEEDED: endurance] —
RoHS Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Memory Format — FLASH
Technology — FLASH - NOR Memory IC
Density — 32 Mb (4M x 8, 2M x 16)
Memory Organization — 4M x 8 / 2M x 16
Supply Voltage — 3 V class (per manufacturer datasheet)
Boot Block Location — Bottom (DB variant)
Byte/Word Organization Select — Yes (BYTE pin)
Applications Domain — Embedded code storage / XIP
Standard Pack Quantity — [DATA_NEEDED: standard pack quantity]

Datasheets & Resources

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