M29W320DT70N3E vs M29DW323DB70N3E 对比

详细并排对比 M29W320DT70N3E 出自 Micron Technology 和 M29DW323DB70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W320DT70N3E M29W320DT70N3E - 32Mbit NOR Flash 70ns 48-TSOP | Micron

M29W320DT70N3E - 32Mbit NOR Flash 70ns 48-TSOP | Micron

M29W320DT70N3E ✓ 量产中
Micron Technology
M29DW323DB70N3E M29DW323DB70N3E - 32Mb NOR Flash 70ns 48-TSOP | Micron

M29DW323DB70N3E - 32Mb NOR Flash 70ns 48-TSOP | Micron

M29DW323DB70N3E ✓ 量产中

规格对比

参数 M29W320DT70N3E M29DW323DB70N3E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.05 $2.55
存储器类型 NOR Flash Flash - NOR
存储容量 32 Mbit —
存储组织 4M x8 / 2M x16 —
接口 Parallel Parallel
Access Time 70 ns 70 ns
Supply Voltage (VCC) 2.7 V to 3.6 V —
Read Current (typical) 10 mA —
Boot Block Architecture Top boot (DT suffix) —
Boot Region 16 KByte boot block, two 8 KByte parameter blocks, 32 KByte small main block —
封装 48-TSOP I 48-TSOP I
Package Length 18.4 mm —
安装类型 Surface Mount Surface Mount
MSL 等级 3 (168 Hours) —
Peak Reflow Temperature Time 30 s —
Packaging Tray —
工作温度 [DATA_NEEDED: operating temperature range] -40C to +125C
Program/Erase Cycles [DATA_NEEDED: endurance] —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Memory Format — FLASH
Technology — FLASH - NOR Memory IC
Density — 32 Mb (4M x 8, 2M x 16)
Memory Organization — 4M x 8 / 2M x 16
电源电压 — 3 V class (per manufacturer datasheet)
Boot Block Location — Bottom (DB variant)
Byte/Word Organization Select — Yes (BYTE pin)
Applications Domain — Embedded code storage / XIP
Standard Pack Quantity — [DATA_NEEDED: standard pack quantity]

数据手册与资源

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