M29W400FB55N3F vs M29W400FB55N3E Comparison

Detailed side-by-side comparison of M29W400FB55N3F by Micron Technology and M29W400FB55N3E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
M29W400FB55N3F M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F ✓ Active
Micron Technology
M29W400FB55N3E M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E ✓ Active

Specification Comparison

Parameter M29W400FB55N3F M29W400FB55N3E
Brand Micron Technology Micron Technology
Category Memory ICs EEPROM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.55 $0.00
Memory Type NOR Flash NOR Flash (parallel)
Memory Size 4 Mbit —
Organization 512K x8 / 256K x16 512K x 8 bit / 256K x 16 bit
Interface Parallel (asynchronous) Parallel, 8-bit/16-bit (BYTE# selectable)
Access Time 55 ns 55 ns
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V
Program/Erase Supply Single 2.7 V to 3.6 V —
Byte/Word Select BYTE# pin —
Block Architecture Boot block with hardware sector protection 19 memory blocks, 1 boot block (bottom, FB)
Program Suspend/Erase Suspend Supported —
Package 48-pin TSOP I (12 x 20 mm) 48-TSOP I, 12 x 20 mm
Mounting Type Surface Mount Surface Mount
Packaging Tape & Reel (TR) Tray
Lead-Free / RoHS Yes (F suffix = lead-free RoHS-compliant) —
Operating Temperature [DATA_NEEDED: operating temperature range] -40C to +125C
Endurance [DATA_NEEDED: program/erase cycles per block] —
Data Retention [DATA_NEEDED: retention years] —
Density — 4 Mbit (4194 kbits)
Programming Time — 10 us per byte/word typical
Boot Block Hardware Protection — Yes
Pins — 48
RoHS Status — Compliant
Speed Grades in Family — 55 ns, 70 ns

Datasheets & Resources

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