M29W400FB55N3F vs M29W400FB55N3E 对比

详细并排对比 M29W400FB55N3F 出自 Micron Technology 和 M29W400FB55N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W400FB55N3F M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F ✓ 量产中
Micron Technology
M29W400FB55N3E M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E ✓ 量产中

规格对比

参数 M29W400FB55N3F M29W400FB55N3E
品牌 Micron Technology Micron Technology
分类 Memory ICs EEPROM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.55 $0.00
存储器类型 NOR Flash NOR Flash (parallel)
存储容量 4 Mbit —
存储组织 512K x8 / 256K x16 512K x 8 bit / 256K x 16 bit
接口 Parallel (asynchronous) Parallel, 8-bit/16-bit (BYTE# selectable)
Access Time 55 ns 55 ns
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V
Program/Erase Supply Single 2.7 V to 3.6 V —
Byte/Word Select BYTE# pin —
Block Architecture Boot block with hardware sector protection 19 memory blocks, 1 boot block (bottom, FB)
Program Suspend/Erase Suspend Supported —
封装 48-pin TSOP I (12 x 20 mm) 48-TSOP I, 12 x 20 mm
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel (TR) Tray
Lead-Free / RoHS Yes (F suffix = lead-free RoHS-compliant) —
工作温度 [DATA_NEEDED: operating temperature range] -40C to +125C
Endurance [DATA_NEEDED: program/erase cycles per block] —
Data Retention [DATA_NEEDED: retention years] —
Density — 4 Mbit (4194 kbits)
Programming Time — 10 us per byte/word typical
Boot Block Hardware Protection — Yes
Pins — 48
RoHS 状态 — Compliant
Speed Grades in Family — 55 ns, 70 ns

数据手册与资源

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