M29W400FB55N3F vs M29W400FB55N3E Vergleich
Detaillierter Direktvergleich von M29W400FB55N3F von Micron Technology und M29W400FB55N3E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology
M29W400FB55N3E ✓ AktivSpezifikationsvergleich
| Parameter | M29W400FB55N3F | M29W400FB55N3E |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | EEPROM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,55 | $0,00 |
| Speichertyp | NOR Flash | NOR Flash (parallel) |
| Speichergröße | 4 Mbit | — |
| Speicherorganisation | 512K x8 / 256K x16 | 512K x 8 bit / 256K x 16 bit |
| Schnittstelle | Parallel (asynchronous) | Parallel, 8-bit/16-bit (BYTE# selectable) |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Program/Erase Supply | Single 2.7 V to 3.6 V | — |
| Byte/Word Select | BYTE# pin | — |
| Block Architecture | Boot block with hardware sector protection | 19 memory blocks, 1 boot block (bottom, FB) |
| Program Suspend/Erase Suspend | Supported | — |
| Gehäuse | 48-pin TSOP I (12 x 20 mm) | 48-TSOP I, 12 x 20 mm |
| Montageart | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | Tray |
| Lead-Free / RoHS | Yes (F suffix = lead-free RoHS-compliant) | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Endurance | [DATA_NEEDED: program/erase cycles per block] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| Density | — | 4 Mbit (4194 kbits) |
| Programming Time | — | 10 us per byte/word typical |
| Boot Block Hardware Protection | — | Yes |
| Pins | — | 48 |
| RoHS-Status | — | Compliant |
| Speed Grades in Family | — | 55 ns, 70 ns |