M321R4GA3EB2-CWM vs M321R4GA3EB0-CWM Comparison
Detailed side-by-side comparison of M321R4GA3EB2-CWM by Samsung Electronics and M321R4GA3EB0-CWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M321R4GA3EB2-CWM | M321R4GA3EB0-CWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | EEPROM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1,260.00 | $1,489.00 |
| Memory Capacity | 32 GB | — |
| Memory Type | DDR5 SDRAM ECC Registered (RDIMM) | DDR5 SDRAM |
| Data Rate | 5600 MT/s (PC5-44800) | 5600 MT/s (PC5-44800) |
| Form Factor | 288-pin RDIMM | 288-pin DIMM |
| Organization | 2Rx8 (dual rank, x8) | 4Gx72 |
| Operating Voltage | 1.1 V | 1.1 V |
| CAS Latency | CL46 | CL46 |
| DRAM Composition | 20 x 2Gx8 FBGA DRAM components | 20 x FBGA 2Gx8 DDR5 DRAM |
| Ranks | 2 | — |
| Error Correction | On-die ECC (ODECC) + registered parity/CRC | — |
| DRAM Die | E-die (12nm-class process) | — |
| JEDEC Compliance | JEDEC PC5-44800R compliant | — |
| Module Supply | 12 V input with on-module PMIC (1.1 V DRAM rail) | — |
| Compatible Platforms | Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro DDR5 servers | — |
| RoHS Status | Compliant | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | — |
| Peak Bandwidth | Approx. 44.8 GB/s per module | — |
| Capacity | — | 32 GB |
| Module Type | — | ECC Registered DIMM (RDIMM) |
| Rank Configuration | — | 2Rx8 (Dual Rank) |
| ECC | — | Yes (Registered with ECC) |
| Configuration | — | 1 x 32 GB |
| Bandwidth Class | — | PC5-44800 (44800 MB/s) |
| Application Segment | — | Server / Datacenter |
| Brand | — | Samsung Electronics |
| GTIN / EAN | — | 5715328154490 |