M321R4GA3EB0-CWM - 32GB DDR5-5600 ECC RDIMM | Samsung
MPN: M321R4GA3EB0-CWM ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1585.89 | $1,585.89 |
| 10 | $1569 | $15,690.00 |
| 100 | $1545 | $154,500.00 |
| 500 | $1512 | $756,000.00 |
| 1,000 | $1489 | $1,489,000.00 |
Drop-in alternatives for M321R4GA3EB0-CWM — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
M321R4GA3EB0-CWY
✅ Drop-In📋 Reference alternative (not in catalog)
M321R4GA3EB2-CWM
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$89 / Unit
View Datasheet →M321R4GA0EB2-CWM
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$69 / Unit
View Datasheet →M321R4GA0EB0-CWM
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$820 / Unit
View Datasheet →M321R4GA3PB0-CWM
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$70.5 / Unit
View Datasheet →M321R4GA3EB0-CWM Maximum Ratings & Electrical Characteristics
| Capacity | 32 GB |
| Memory Type | DDR5 SDRAM |
| Form Factor | 288-pin DIMM |
| Module Type | ECC Registered DIMM (RDIMM) |
| Data Rate | 5600 MT/s (PC5-44800) |
| CAS Latency | CL46 |
| Operating Voltage | 1.1 V |
| Rank Configuration | 2Rx8 (Dual Rank) |
| Organization | 4Gx72 |
| DRAM Composition | 20 x FBGA 2Gx8 DDR5 DRAM |
| ECC | Yes (Registered with ECC) |
| Configuration | 1 x 32 GB |
| Bandwidth Class | PC5-44800 (44800 MB/s) |
| Application Segment | Server / Datacenter |
| Brand | Samsung Electronics |
| GTIN / EAN | 5715328154490 |
M321R4GA3EB0-CWM standard Pin Configuration Guide
Complete pinout information for M321R4GA3EB0-CWM (standard package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for M321R4GA3EB0-CWM.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
M321R4GA3EB0-CWM is suitable for 6 applications: Dell PowerEdge Rack Servers, Virtualization and VM-Density Hosting, Edge Compute Nodes, Datacenter Memory Upgrades, Enterprise Storage Controllers, High-Performance Workstations.
Dell PowerEdge Rack Servers
The M321R4GA3EB0-CWM is a validated memory option for Dell PowerEdge C6620, MX760c, R660, and R660xs platforms via Dell cross-reference P8XPW. Its DDR5-5600 data rate matches the memory controller speed of 4th/5th Gen Intel Xeon Scalable processors, while the registered ECC architecture protects against single-bit errors that would otherwise crash virtualization hosts. Modules install in 288-pin RDIMM slots with population rules per the platform's memory configuration guide; mixing ranks across channels should follow the QVL. Dual-rank 2Rx8 topology improves effective bandwidth through rank interleaving, delivering PC5-44800 throughput for general-purpose enterprise workloads and scale-out compute nodes.
Recommended
Virtualization and VM-Density Hosting
For low-to-moderate VM density hosts, the 32GB capacity of the M321R4GA3EB0-CWM balances cost per GB against slot budget. DDR5-5600 with CL46 latency reduces memory access stalls for hypervisor workloads, while ECC registered signaling maintains uptime across months of continuous operation. Each module consumes one of the server's 288-pin RDIMM slots at 1.1V, keeping per-DIMM power low in dense chassis. Populating channels with identical 2Rx8 modules ensures stable memory training across BIOS updates. Serversupply and ServerOrbit position this module specifically for general-purpose virtualization, edge compute nodes, and infrastructure where certified-compatible, brand-new Samsung silicon with full ECC is required for reliability SLAs.
Recommended
Edge Compute Nodes
Edge compute deployments benefit from the M321R4GA3EB0-CWM's combination of DDR5 efficiency and server-grade reliability. The 1.1V operating voltage lowers per-module power versus DDR4 RDIMMs, reducing thermal load in constrained edge enclosures, while the 5600 MT/s data rate feeds modern Xeon-class edge processors without becoming a bandwidth bottleneck. ECC registered operation prevents silent data corruption in remote sites where physical access is infrequent. Corewave Labs and Global Memory Supply position this module for edge compute use, noting its fit for low-VM-density hosts. Standard 288-pin RDIMM slots in short-depth edge servers accept the module directly with no adapters required.
Recommended
Datacenter Memory Upgrades
Datacenter capacity upgrades use the M321R4GA3EB0-CWM to move legacy DDR4 platforms toward DDR5 density, with each 32GB dual-rank module filling one channel of 4th/5th Gen Xeon or equivalent EPYC-class systems that support DDR5-5600 RDIMMs. Samsung-original parts preserve OEM warranty chains and QVL validation required by enterprise support contracts, which is why ServerSupply, DirectMacro, and HardDiskDirect stock the exact MPN rather than generic equivalents. Memory population should follow the server vendor's ranked-slot ordering so the two ranks of each module interleave correctly across channels, sustaining the full PC5-44800 bandwidth headroom for database and analytics workloads.
Recommended
Enterprise Storage Controllers
Enterprise storage arrays and RAID controllers rely on registered ECC memory to protect metadata and cache contents against bit errors. The M321R4GA3EB0-CWM's ECC registered architecture, built on twenty FBGA 2Gx8 DDR5 DRAM devices in a 4Gx72 organization, provides the check-bit bandwidth storage controllers require for cache coherency and journaling workloads. DDR5-5600 speed keeps cache flush and replication operations responsive, and the 1.1V rail reduces power in always-on arrays. Compatibility must be validated against the storage vendor's qualified parts list, mirroring the QVL discipline used for server RDIMMs, since some controllers enforce strict revision matching across all populated channels.
Recommended
High-Performance Workstations
Workstation platforms built on Xeon W-class or Threadripper PRO processors with RDIMM support can use the M321R4GA3EB0-CWM for memory-intensive CAD, simulation, and AI development workloads. The DDR5-5600 dual-rank configuration provides the bandwidth and interleaving that benefit large-dataset rendering and model training, while ECC protects long-running simulations from silent corruption. Note that consumer desktop platforms cannot accept this module - it requires a board with registered DDR5 support. RamQuote confirms the module suits general compute platforms that list DDR5 RDIMMs; verify workstation QVL support, since some entry workstation boards cap training at lower DDR5 speeds.
Recommended
Recommended Products Summary
Engineering reference data for M321R4GA3EB0-CWM — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | M321R4GA3EB0-CWY | M321R4GA3EB2-CWM | M321R4GA0EB2-CWM | M321R4GA0EB0-CWM | M321R4GA3PB0-CWM |
|---|---|---|---|---|---|---|
| Package | 288-pin DIMM | 288-pin DIMM - same | 288-pin DIMM - same | 288-pin DIMM - same | 288-pin DIMM - same | 288-pin DIMM - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Capacity | 32 GB | 32 GB | 32 GB | 32 GB | 32 GB | 32 GB |
| Data Rate | 5600 MT/s (PC5-44800) | 5600 MT/s | 5600 MT/s | 5600 MT/s | [DATA_NEEDED] | [DATA_NEEDED] |
| Module Type | ECC Registered DIMM | ECC RDIMM | ECC RDIMM | ECC RDIMM | ECC RDIMM | ECC RDIMM |
| Rank Configuration | 2Rx8 (Dual Rank) | 2Rx8 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Operating Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| CAS Latency | CL46 | CL46 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Samsung-original silicon with OEM QVL validation (vs NEMIX RAM MR44800-328K1 (third-party equivalent))
- DDR5-5600 speed bin at 1.1V (vs M321R4GA0EB0-CWM (family variant))
- Dual-rank 2Rx8 topology (vs Single-rank x8 equivalents in the market)
Design Notes
RDIMMs cannot be mixed with UDIMMs or LRDIMMs on the same channel. The M321R4GA3EB0-CWM requires a platform whose memory controller supports registered DDR5-5600; desktop consumer boards will not boot with this module. Always populate channels with identical modules (same MPN family, rank, and speed) per the server vendor's memory population rules to guarantee consistent BIOS memory training and avoid speed down-training.
Server memory channel layout follows the platform vendor's slot-ordering guide. For Dell PowerEdge R660/C6620 systems, install the M321R4GA3EB0-CWM starting with the white-marked slots per the hardware owner's manual. Dual-rank modules consume more electrical margin per channel than single-rank parts, so maximum supported speed may drop when all channels are fully populated with 2Rx8 modules - consult the platform's memory configuration table for the derated speed at full population.
The module operates at the DDR5 standard 1.1V. Per-module power is substantially lower than DDR4 RDIMMs, but full-population configurations multiply consumption: a 16-DIMM server adds dozens of watts from memory alone. Estimated: at roughly 5-8 W per active DDR5 RDIMM (approximate, workload-dependent), a fully populated dual-socket server should budget 80-130 W for memory in thermal and PSU sizing. Verify against the server vendor's power calculator for your exact configuration.
Compliance Information
Compliance data not present in provided web sources. Samsung enterprise memory modules are typically RoHS compliant, but this must be confirmed from official Samsung documentation.
