MHT1008NT1 vs MHT1008NT1515 Comparison
Detailed side-by-side comparison of MHT1008NT1 by NXP Semiconductors and MHT1008NT1515 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MHT1008NT1515 - 12.5W RF LDMOS 2450MHz ISM N-Channel | NXP
MHT1008NT1515 ✓ ActiveSpecification Comparison
| Parameter | MHT1008NT1 | MHT1008NT1515 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Part Number | MHT1008NT1 | MHT1008NT1515 |
| Transistor Type | LDMOS, N-Channel Enhancement-Mode | — |
| Application | RF Power Transistor, ISM Band | — |
| Operating Frequency | 2400 MHz to 2500 MHz (2450 MHz typ) | 2450 MHz (ISM band) |
| Test Frequency | 2450 MHz | — |
| Drain Supply Voltage (Vdd) | 28 V (typical) | — |
| Output Power (CW) | 12.5 W | 12.5 W |
| Power Gain (typical) | 18.6 dB at 2450 MHz | — |
| Drain Current | 110 mA | — |
| Power Gain (DigiKey reported) | 20.9 dB (max value reported by distributor) | — |
| Package / Case | PLD-1.5W (SOT1811), ceramic flanged | — |
| Mounting Type | Chassis / flange mount with bolt-down heatsink | Surface Mount / Flange Mount with heat spreader |
| RoHS Status | [DATA_NEEDED: rohs_status] | Compliant |
| Lead-Free | [DATA_NEEDED: lead_free] | — |
| MSL (Moisture Sensitivity Level) | [DATA_NEEDED: msl_level] | — |
| Device Type | — | RF Power LDMOS Transistor, N-Channel Enhancement-Mode |
| Drain-Source Voltage V(BR)DSS | — | 65 V (minimum) |
| Gate Threshold Voltage VGS(th) | — | 1.6 V |
| Typical Gain | — | 20.9 dB at 2.45 GHz |
| Drain Bias (typical) | — | 28 V |
| Total Power Dissipation | — | 48.1 W |
| Operating Junction Temperature | — | -40 °C to +150 °C |
| Package | — | PLD-1.5W (PLD-1) ceramic flange |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |