MHT1008NT1 vs MHT1008NT1515 Comparación
Comparación detallada lado a lado de MHT1008NT1 por NXP Semiconductors y MHT1008NT1515 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MHT1008NT1515 - 12.5W RF LDMOS 2450MHz ISM N-Channel | NXP
MHT1008NT1515 ✓ ActivoComparación de especificaciones
| Parámetro | MHT1008NT1 | MHT1008NT1515 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9,55 | $0,94 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Part Number | MHT1008NT1 | MHT1008NT1515 |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode | — |
| Application | RF Power Transistor, ISM Band | — |
| Operating Frequency | 2400 MHz to 2500 MHz (2450 MHz typ) | 2450 MHz (ISM band) |
| Test Frequency | 2450 MHz | — |
| Drain Supply Voltage (Vdd) | 28 V (typical) | — |
| Output Power (CW) | 12.5 W | 12.5 W |
| Power Gain (typical) | 18.6 dB at 2450 MHz | — |
| Drain Current | 110 mA | — |
| Power Gain (DigiKey reported) | 20.9 dB (max value reported by distributor) | — |
| Encapsulado / Carcasa | PLD-1.5W (SOT1811), ceramic flanged | — |
| Tipo de montaje | Chassis / flange mount with bolt-down heatsink | Surface Mount / Flange Mount with heat spreader |
| Estado RoHS | [DATA_NEEDED: rohs_status] | Compliant |
| Lead-Free | [DATA_NEEDED: lead_free] | — |
| MSL (Moisture Sensitivity Level) | [DATA_NEEDED: msl_level] | — |
| Device Type | — | RF Power LDMOS Transistor, N-Channel Enhancement-Mode |
| Drain-Source Voltage V(BR)DSS | — | 65 V (minimum) |
| Gate Threshold Voltage VGS(th) | — | 1.6 V |
| Typical Gain | — | 20.9 dB at 2.45 GHz |
| Drain Bias (typical) | — | 28 V |
| Total Power Dissipation | — | 48.1 W |
| Temperatura de unión de funcionamiento | — | -40 °C to +150 °C |
| Encapsulado | — | PLD-1.5W (PLD-1) ceramic flange |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |