MMG3007NT1 vs MMH3111NT1 Comparison
Detailed side-by-side comparison of MMG3007NT1 by NXP Semiconductors and MMH3111NT1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MMH3111NT1 - 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET GPA | NXP
MMH3111NT1 ✓ ActiveSpecification Comparison
| Parameter | MMG3007NT1 | MMH3111NT1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | RF Amplifiers | RF Amplifiers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $2.60 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Description | RF Amplifier IC, General Purpose Amplifier (GPA), InGaP HBT | General Purpose Amplifier (GPA) |
| Frequency Range | 0 Hz to 6000 MHz (DC to 6 GHz) | 250 MHz to 4000 MHz |
| Small-Signal Gain | 19 dB @ 900 MHz (typical) | — |
| P1dB Output Power | 16 dBm @ 900 MHz | — |
| Third-Order Output Intercept Point (OIP3) | 30 dBm @ 900 MHz | — |
| Supply Voltage | 5 V (typical, single supply) | 6 V nominal (per distributor listing) |
| Package | SOT-89-4 (4-pin, plastic, surface mount) | SOT-89-4 (3 leads + tab) |
| Technology | InGaP Heterojunction Bipolar Transistor (HBT) | — |
| Input Matching | Internally matched to 50 ohms | — |
| Output Matching | Internally matched to 50 ohms | — |
| Operating Class | Class A, small-signal, general purpose | Class A, small-signal, high linearity |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| RF Input Power (max) | [DATA_NEEDED: maximum RF input power rating] | — |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant (per NXP product page) | [DATA_NEEDED: RoHS status] |
| Tape and Reel Quantity | 1,000 units per reel, 12 mm tape width, 7-inch reel (T1 = 1k) | — |
| Process Technology | — | GaAs Heterostructure FET (HFET) |
| Typical Small-Signal Gain | — | 12 dB |
| Saturated Output Power (Psat) | — | 22.5 dBm |
| Input / Output Matching | — | Internally prematched |
| Application Categories | — | Cellular, PCS, ISM, WLL |
| MSL Level | — | [DATA_NEEDED: MSL rating] |
| Operating Temperature | — | [DATA_NEEDED: operating temperature range] |