MMG3007NT1 vs MMH3111NT1 Comparação
Comparação detalhada lado a lado de MMG3007NT1 por NXP Semiconductors e MMH3111NT1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
NXP Semiconductors
MMH3111NT1 - 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET GPA | NXP
MMH3111NT1 ✓ AtivoComparação de especificações
| Parâmetro | MMG3007NT1 | MMH3111NT1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | RF Amplifiers | RF Amplifiers |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,55 | $2,60 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Description | RF Amplifier IC, General Purpose Amplifier (GPA), InGaP HBT | General Purpose Amplifier (GPA) |
| Frequency Range | 0 Hz to 6000 MHz (DC to 6 GHz) | 250 MHz to 4000 MHz |
| Small-Signal Gain | 19 dB @ 900 MHz (typical) | — |
| P1dB Output Power | 16 dBm @ 900 MHz | — |
| Third-Order Output Intercept Point (OIP3) | 30 dBm @ 900 MHz | — |
| Tensão de alimentação | 5 V (typical, single supply) | 6 V nominal (per distributor listing) |
| Encapsulamento | SOT-89-4 (4-pin, plastic, surface mount) | SOT-89-4 (3 leads + tab) |
| Technology | InGaP Heterojunction Bipolar Transistor (HBT) | — |
| Input Matching | Internally matched to 50 ohms | — |
| Output Matching | Internally matched to 50 ohms | — |
| Operating Class | Class A, small-signal, general purpose | Class A, small-signal, high linearity |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| RF Input Power (max) | [DATA_NEEDED: maximum RF input power rating] | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Status RoHS | Compliant (per NXP product page) | [DATA_NEEDED: RoHS status] |
| Tape and Reel Quantity | 1,000 units per reel, 12 mm tape width, 7-inch reel (T1 = 1k) | — |
| Process Technology | — | GaAs Heterostructure FET (HFET) |
| Typical Small-Signal Gain | — | 12 dB |
| Saturated Output Power (Psat) | — | 22.5 dBm |
| Input / Output Matching | — | Internally prematched |
| Application Categories | — | Cellular, PCS, ISM, WLL |
| Nível MSL | — | [DATA_NEEDED: MSL rating] |
| Temperatura de operação | — | [DATA_NEEDED: operating temperature range] |