MMG3007NT1 vs MMH3111NT1 Vergleich
Detaillierter Direktvergleich von MMG3007NT1 von NXP Semiconductors und MMH3111NT1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MMH3111NT1 - 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET GPA | NXP
MMH3111NT1 ✓ AktivSpezifikationsvergleich
| Parameter | MMG3007NT1 | MMH3111NT1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | RF Amplifiers | RF Amplifiers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,55 | $2,60 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Description | RF Amplifier IC, General Purpose Amplifier (GPA), InGaP HBT | General Purpose Amplifier (GPA) |
| Frequency Range | 0 Hz to 6000 MHz (DC to 6 GHz) | 250 MHz to 4000 MHz |
| Small-Signal Gain | 19 dB @ 900 MHz (typical) | — |
| P1dB Output Power | 16 dBm @ 900 MHz | — |
| Third-Order Output Intercept Point (OIP3) | 30 dBm @ 900 MHz | — |
| Versorgungsspannung | 5 V (typical, single supply) | 6 V nominal (per distributor listing) |
| Gehäuse | SOT-89-4 (4-pin, plastic, surface mount) | SOT-89-4 (3 leads + tab) |
| Technology | InGaP Heterojunction Bipolar Transistor (HBT) | — |
| Input Matching | Internally matched to 50 ohms | — |
| Output Matching | Internally matched to 50 ohms | — |
| Operating Class | Class A, small-signal, general purpose | Class A, small-signal, high linearity |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| RF Input Power (max) | [DATA_NEEDED: maximum RF input power rating] | — |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant (per NXP product page) | [DATA_NEEDED: RoHS status] |
| Tape and Reel Quantity | 1,000 units per reel, 12 mm tape width, 7-inch reel (T1 = 1k) | — |
| Process Technology | — | GaAs Heterostructure FET (HFET) |
| Typical Small-Signal Gain | — | 12 dB |
| Saturated Output Power (Psat) | — | 22.5 dBm |
| Input / Output Matching | — | Internally prematched |
| Application Categories | — | Cellular, PCS, ISM, WLL |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| Betriebstemperatur | — | [DATA_NEEDED: operating temperature range] |