MMG3007NT1 vs MMH3111NT1 Comparaison
Comparaison détaillée côte à côte de MMG3007NT1 par NXP Semiconductors et MMH3111NT1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MMH3111NT1 - 250-4000 MHz, 12 dB, 22.5 dBm GaAs HFET GPA | NXP
MMH3111NT1 ✓ ActifComparaison des spécifications
| Paramètre | MMG3007NT1 | MMH3111NT1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF Amplifiers | RF Amplifiers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,55 | $2,60 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Description | RF Amplifier IC, General Purpose Amplifier (GPA), InGaP HBT | General Purpose Amplifier (GPA) |
| Frequency Range | 0 Hz to 6000 MHz (DC to 6 GHz) | 250 MHz to 4000 MHz |
| Small-Signal Gain | 19 dB @ 900 MHz (typical) | — |
| P1dB Output Power | 16 dBm @ 900 MHz | — |
| Third-Order Output Intercept Point (OIP3) | 30 dBm @ 900 MHz | — |
| Tension d'alimentation | 5 V (typical, single supply) | 6 V nominal (per distributor listing) |
| Boîtier | SOT-89-4 (4-pin, plastic, surface mount) | SOT-89-4 (3 leads + tab) |
| Technology | InGaP Heterojunction Bipolar Transistor (HBT) | — |
| Input Matching | Internally matched to 50 ohms | — |
| Output Matching | Internally matched to 50 ohms | — |
| Operating Class | Class A, small-signal, general purpose | Class A, small-signal, high linearity |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| RF Input Power (max) | [DATA_NEEDED: maximum RF input power rating] | — |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant (per NXP product page) | [DATA_NEEDED: RoHS status] |
| Tape and Reel Quantity | 1,000 units per reel, 12 mm tape width, 7-inch reel (T1 = 1k) | — |
| Process Technology | — | GaAs Heterostructure FET (HFET) |
| Typical Small-Signal Gain | — | 12 dB |
| Saturated Output Power (Psat) | — | 22.5 dBm |
| Input / Output Matching | — | Internally prematched |
| Application Categories | — | Cellular, PCS, ISM, WLL |
| Niveau MSL | — | [DATA_NEEDED: MSL rating] |
| Température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |