MPC17531ATEP vs MPC17529EP Comparison
Detailed side-by-side comparison of MPC17531ATEP by NXP Semiconductors and MPC17529EP by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MPC17531ATEP - Dual H-Bridge Motor Driver, 8.6V, 700mA | NXP
MPC17531ATEP ⚠ Last Time BuyNXP Semiconductors
MPC17529EP - 0.7A Dual H-Bridge Motor Driver | NXP | 24-QFN-EP
MPC17529EP ✓ ActiveSpecification Comparison
| Parameter | MPC17531ATEP | MPC17529EP |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | Motor Drivers | Motor Drivers |
| Lifecycle Status | Last Time Buy | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.10 | $0.99 |
| Topology | Dual monolithic H-Bridge | Dual H-Bridge |
| Number of Outputs | 1 or 2 H-Bridges | 2 (dual H-bridge) |
| Motor Type | DC brushed / bipolar stepper | Brushed DC, Bipolar Stepper |
| Load Supply Voltage (VM) | 2.0 V to 8.6 V | 2.0 V to 6.8 V |
| Logic Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 5.6 V |
| Continuous Output Current per Channel | 700 mA | — |
| Peak Output Current per Channel | 1.4 A | — |
| On-Resistance (typ per FET) | [DATA_NEEDED: Rdson typ] | — |
| PWM Switching Frequency | Up to 200 kHz | — |
| Control Interface | Parallel (4 input pins per bridge) | — |
| Shoot-Through Protection | Built-in (cross-conduction dead time) | Yes (built-in) |
| Charge Pump | Internal | — |
| Operating Temperature Range | [DATA_NEEDED: operating temp range] | — |
| Package | 24-QFN-EP (HVQCCN) 4x4 mm | 24-QFN-EP (4x4 mm) with exposed thermal pad |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL rating] | — |
| RoHS Status | Compliant | — |
| Output Current (Continuous) | — | 0.7 A per bridge |
| Logic Interface | — | CMOS Parallel, 3.0 V/5.0 V compatible |
| Control Inputs | — | 4 (IN1, IN2, IN3, IN4) |
| On-chip Charge Pump | — | Yes (for high-side gate drive) |
| Undervoltage Shutdown | — | Yes |
| Junction Operating Temperature | — | -20 C to +150 C TJ |
| Process Technology | — | CMOS / Power MOSFET monolithic |