MPC17531ATEP vs MPC17529EP Comparación
Comparación detallada lado a lado de MPC17531ATEP por NXP Semiconductors y MPC17529EP por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MPC17531ATEP - Dual H-Bridge Motor Driver, 8.6V, 700mA | NXP
MPC17531ATEP ⚠ Última compraNXP Semiconductors
MPC17529EP - 0.7A Dual H-Bridge Motor Driver | NXP | 24-QFN-EP
MPC17529EP ✓ ActivoComparación de especificaciones
| Parámetro | MPC17531ATEP | MPC17529EP |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Motor Drivers | Motor Drivers |
| Estado del ciclo de vida | Última compra | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,10 | $0,99 |
| Topología | Dual monolithic H-Bridge | Dual H-Bridge |
| Número de salidas | 1 or 2 H-Bridges | 2 (dual H-bridge) |
| Motor Type | DC brushed / bipolar stepper | Brushed DC, Bipolar Stepper |
| Load Supply Voltage (VM) | 2.0 V to 8.6 V | 2.0 V to 6.8 V |
| Logic Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 5.6 V |
| Continuous Output Current per Channel | 700 mA | — |
| Peak Output Current per Channel | 1.4 A | — |
| On-Resistance (typ per FET) | [DATA_NEEDED: Rdson typ] | — |
| PWM Switching Frequency | Up to 200 kHz | — |
| Control Interface | Parallel (4 input pins per bridge) | — |
| Shoot-Through Protection | Built-in (cross-conduction dead time) | Yes (built-in) |
| Charge Pump | Internal | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temp range] | — |
| Encapsulado | 24-QFN-EP (HVQCCN) 4x4 mm | 24-QFN-EP (4x4 mm) with exposed thermal pad |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | Compliant | — |
| Output Current (Continuous) | — | 0.7 A per bridge |
| Logic Interface | — | CMOS Parallel, 3.0 V/5.0 V compatible |
| Control Inputs | — | 4 (IN1, IN2, IN3, IN4) |
| On-chip Charge Pump | — | Yes (for high-side gate drive) |
| Undervoltage Shutdown | — | Yes |
| Junction Operating Temperature | — | -20 C to +150 C TJ |
| Process Technology | — | CMOS / Power MOSFET monolithic |