MPC17531ATEP vs MPC17529EP Vergleich
Detaillierter Direktvergleich von MPC17531ATEP von NXP Semiconductors und MPC17529EP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MPC17531ATEP - Dual H-Bridge Motor Driver, 8.6V, 700mA | NXP
MPC17531ATEP ⚠ Letzte BestellmöglichkeitNXP Semiconductors
MPC17529EP - 0.7A Dual H-Bridge Motor Driver | NXP | 24-QFN-EP
MPC17529EP ✓ AktivSpezifikationsvergleich
| Parameter | MPC17531ATEP | MPC17529EP |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Motor Drivers | Motor Drivers |
| Lebenszyklusstatus | Letzte Kaufgelegenheit | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,10 | $0,99 |
| Topologie | Dual monolithic H-Bridge | Dual H-Bridge |
| Anzahl der Ausgänge | 1 or 2 H-Bridges | 2 (dual H-bridge) |
| Motor Type | DC brushed / bipolar stepper | Brushed DC, Bipolar Stepper |
| Load Supply Voltage (VM) | 2.0 V to 8.6 V | 2.0 V to 6.8 V |
| Logic Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 5.6 V |
| Continuous Output Current per Channel | 700 mA | — |
| Peak Output Current per Channel | 1.4 A | — |
| On-Resistance (typ per FET) | [DATA_NEEDED: Rdson typ] | — |
| PWM Switching Frequency | Up to 200 kHz | — |
| Control Interface | Parallel (4 input pins per bridge) | — |
| Shoot-Through Protection | Built-in (cross-conduction dead time) | Yes (built-in) |
| Charge Pump | Internal | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temp range] | — |
| Gehäuse | 24-QFN-EP (HVQCCN) 4x4 mm | 24-QFN-EP (4x4 mm) with exposed thermal pad |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| RoHS-Status | Compliant | — |
| Output Current (Continuous) | — | 0.7 A per bridge |
| Logic Interface | — | CMOS Parallel, 3.0 V/5.0 V compatible |
| Control Inputs | — | 4 (IN1, IN2, IN3, IN4) |
| On-chip Charge Pump | — | Yes (for high-side gate drive) |
| Undervoltage Shutdown | — | Yes |
| Junction Operating Temperature | — | -20 C to +150 C TJ |
| Process Technology | — | CMOS / Power MOSFET monolithic |