MPC17531ATEP vs MPC17529EP Comparaison
Comparaison détaillée côte à côte de MPC17531ATEP par NXP Semiconductors et MPC17529EP par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MPC17531ATEP - Dual H-Bridge Motor Driver, 8.6V, 700mA | NXP
MPC17531ATEP ⚠ Dernier achatNXP Semiconductors
MPC17529EP - 0.7A Dual H-Bridge Motor Driver | NXP | 24-QFN-EP
MPC17529EP ✓ ActifComparaison des spécifications
| Paramètre | MPC17531ATEP | MPC17529EP |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Motor Drivers | Motor Drivers |
| Statut du cycle de vie | Dernier achat | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,10 | $0,99 |
| Topologie | Dual monolithic H-Bridge | Dual H-Bridge |
| Nombre de sorties | 1 or 2 H-Bridges | 2 (dual H-bridge) |
| Motor Type | DC brushed / bipolar stepper | Brushed DC, Bipolar Stepper |
| Load Supply Voltage (VM) | 2.0 V to 8.6 V | 2.0 V to 6.8 V |
| Logic Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 5.6 V |
| Continuous Output Current per Channel | 700 mA | — |
| Peak Output Current per Channel | 1.4 A | — |
| On-Resistance (typ per FET) | [DATA_NEEDED: Rdson typ] | — |
| PWM Switching Frequency | Up to 200 kHz | — |
| Control Interface | Parallel (4 input pins per bridge) | — |
| Shoot-Through Protection | Built-in (cross-conduction dead time) | Yes (built-in) |
| Charge Pump | Internal | — |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temp range] | — |
| Boîtier | 24-QFN-EP (HVQCCN) 4x4 mm | 24-QFN-EP (4x4 mm) with exposed thermal pad |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Statut RoHS | Compliant | — |
| Output Current (Continuous) | — | 0.7 A per bridge |
| Logic Interface | — | CMOS Parallel, 3.0 V/5.0 V compatible |
| Control Inputs | — | 4 (IN1, IN2, IN3, IN4) |
| On-chip Charge Pump | — | Yes (for high-side gate drive) |
| Undervoltage Shutdown | — | Yes |
| Junction Operating Temperature | — | -20 C to +150 C TJ |
| Process Technology | — | CMOS / Power MOSFET monolithic |