MPX2010GP vs MPX2050GP Comparison
Detailed side-by-side comparison of MPX2010GP by STMicroelectronics and MPX2050GP by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
STMicroelectronics
MPX2010GP - 10 kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPX2010GP ✓ ActiveNXP Semiconductors
MPX2050GP - 50 kPa Vented Gauge Pressure Sensor | NXP / STMicro
MPX2050GP ✓ ActiveSpecification Comparison
| Parameter | MPX2010GP | MPX2050GP |
|---|---|---|
| Brand | STMicroelectronics | NXP Semiconductors |
| Category | Pressure Sensors | Pressure Sensors |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.20 | $9.85 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | [DATA_NEEDED: maximum overload pressure] |
| Sensitivity (Full-Scale Span) | 25 mV typical at 10 V excitation | — |
| Output Voltage Range | 0 mV to 25 mV (10 V supply) | — |
| Offset (Zero Pressure) | 0 mV nominal | — |
| Supply Voltage (Excitation) | 10 V DC typical (max per datasheet) | — |
| Supply Current | 6 mA DC typical | — |
| Response Time | 1 ms typical | [DATA_NEEDED: response time / bandwidth] |
| Linearity | [DATA_NEEDED: linearity %FS] | +/-0.05% to +/-0.1% of FSS (typ) |
| Temperature Compensation | On-chip, calibrated | — |
| Operating Temperature Range | -40 C to +125 C | — |
| Storage Temperature Range | -40 C to +125 C | — |
| Port Style | Male, 0.19 inch (4.93 mm) tube, vented gauge | Male 0.19" (4.93 mm) Tube |
| Package / Case | 4-SIP Module (Case 344B-01) | 4-SIP Module (Case 344B-01) |
| Mounting Type | Through-Hole (SIP) | Through-Hole (SIP, vertical) |
| Media Compatibility | Dry gases (silicone gel isolation) | — |
| RoHS Status | Compliant | — |
| Output Type | — | Analog Wheatstone Bridge (mV) |
| Full-Scale Output (Typ @ 10 V) | — | 40 mV (4 mV/V) |
| Zero Offset (Typ) | — | 0 mV |
| Supply / Excitation Voltage | — | 10 V typical (max 16 V per datasheet) |
| Pressure Hysteresis | — | < 0.1% of FSS |
| Operating Temperature | — | 0C to +85C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Technology | — | Silicon Piezoresistive, MEMS |
| Diaphragm Material | — | Monolithic silicon with integrated strain gauge |
| Compensation | — | On-chip temperature compensated and laser-trimmed |
| Lead-Free / RoHS | — | Yes (RoHS compliant) |