MPX2010GP vs MPX2050GP Comparaison
Comparaison détaillée côte à côte de MPX2010GP par STMicroelectronics et MPX2050GP par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
STMicroelectronics
MPX2010GP - 10 kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPX2010GP ✓ ActifNXP Semiconductors
MPX2050GP - 50 kPa Vented Gauge Pressure Sensor | NXP / STMicro
MPX2050GP ✓ ActifComparaison des spécifications
| Paramètre | MPX2010GP | MPX2050GP |
|---|---|---|
| Marque | STMicroelectronics | NXP Semiconductors |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $7,20 | $9,85 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | [DATA_NEEDED: maximum overload pressure] |
| Sensitivity (Full-Scale Span) | 25 mV typical at 10 V excitation | — |
| Plage de tension de sortie | 0 mV to 25 mV (10 V supply) | — |
| Offset (Zero Pressure) | 0 mV nominal | — |
| Supply Voltage (Excitation) | 10 V DC typical (max per datasheet) | — |
| Courant d'alimentation | 6 mA DC typical | — |
| Response Time | 1 ms typical | [DATA_NEEDED: response time / bandwidth] |
| Linearity | [DATA_NEEDED: linearity %FS] | +/-0.05% to +/-0.1% of FSS (typ) |
| Temperature Compensation | On-chip, calibrated | — |
| Plage de température de fonctionnement | -40 C to +125 C | — |
| Storage Temperature Range | -40 C to +125 C | — |
| Port Style | Male, 0.19 inch (4.93 mm) tube, vented gauge | Male 0.19" (4.93 mm) Tube |
| Boîtier / Format | 4-SIP Module (Case 344B-01) | 4-SIP Module (Case 344B-01) |
| Type de montage | Through-Hole (SIP) | Through-Hole (SIP, vertical) |
| Media Compatibility | Dry gases (silicone gel isolation) | — |
| Statut RoHS | Compliant | — |
| Type de sortie | — | Analog Wheatstone Bridge (mV) |
| Full-Scale Output (Typ @ 10 V) | — | 40 mV (4 mV/V) |
| Zero Offset (Typ) | — | 0 mV |
| Supply / Excitation Voltage | — | 10 V typical (max 16 V per datasheet) |
| Pressure Hysteresis | — | < 0.1% of FSS |
| Température de fonctionnement | — | 0C to +85C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Technology | — | Silicon Piezoresistive, MEMS |
| Diaphragm Material | — | Monolithic silicon with integrated strain gauge |
| Compensation | — | On-chip temperature compensated and laser-trimmed |
| Lead-Free / RoHS | — | Yes (RoHS compliant) |